參數(shù)資料
型號(hào)： MAC4DCN-001
廠商： ON SEMICONDUCTOR
元件分類： 晶閘管
英文描述： Triacs Silicon Bidirectional Thyristors
中文描述： 800 V, 4 A, TRIAC
封裝： PLASTIC, CASE 369D-01, DPAK-3
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 156K
代理商： MAC4DCN-001
1
Motorola Thyristor Device Data
Motorola, Inc. 1997
Silicon Bidirectional Thyristors
Designed for high volume, low cost, industrial and consumer applications
such as motor control; process control; temperature, light and speed control.
Small Size Surface Mount DPAK Package
Passivated Die for Reliability and Uniformity
Blocking Voltage to 800 V
On–State Current Rating of 4.0 Amperes RMS at 108
°
C
High Immunity to dv/dt — 500 V/ s at 125
°
C
High Immunity to di/dt — 6.0 A/ms at 125
°
C
ORDERING INFORMATION
To Obtain “DPAK” in Surface Mount Leadform (Case 369A)
Shipped in Sleeves — No Suffix, i.e. MAC4DCN
Shipped in 16 mm Tape and Reel — Add “T4” Suffix to Device Number,
i.e. MAC4DCNT4
To Obtain “DPAK” in Straight Lead Version (Case 369) Shipped in Sleeves —
Add “–1” Suffix to Device Number, i.e. MAC4DCN–1
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off–State Voltage (1)
(TJ = –40 to 125
°
C, Sine Wave, 50 to 60 Hz, Gate Open)
MAC4DCM
MAC4DCN
VDRM
600
800
Volts
On–State RMS Current
(Full Cycle Sine Wave, 60 Hz, TC = 108
°
C)
IT(RMS)
4.0
Amps
Peak Non–Repetitive Surge Current
(One Full Cycle, 60 Hz, TJ = 125
°
C)
ITSM
40
Circuit Fusing Consideration (t = 8.3 msec)
I2t
6.6
A2sec
Peak Gate Power
(Pulse Width
≤
10 sec, TC = 108
°
C)
PGM
0.5
Watts
Average Gate Power
(t = 8.3 msec, TC = 108
°
C)
PG(AV)
0.1
Peak Gate Current (Pulse Width
≤
10
sec, TC = 108
°
C)
Peak Gate Voltage (Pulse Width
≤
10
sec, TC = 108
°
C)
Operating Junction Temperature Range
IGM
VGM
TJ
Tstg
0.5
Amps
5.0
Volts
–40 to 125
°
C
Storage Temperature Range
–40 to 150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
Thermal Resistance
— Junction to Ambient (2)
RJC
RJA
RJA
TL
3.5
88
80
°
C/W
Maximum Lead Temperature for Soldering Purposes (3)
260
°
C
(1) VDRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the device are exceeded.
(2) Surface mounted on minimum recommended pad size.
(3) 1/8
″
from case for 10 seconds.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MAC4DCM/D
SEMICONDUCTOR TECHNICAL DATA
TRIACS
4.0 AMPERES RMS
600 thru 800 VOLTS
CASE 369A–13
STYLE 6
MT2
MT1
G
MT2
G
MT2
MT1
Motorola Preferred Devices
相關(guān)PDF資料
PDF描述
MAC4DCN TRIACS 4.0 AMPERES RMS 600 thru 800 VOLTS
MAC4DLM TRIACS 4.0 AMPERES RMS 600 VOLTS
MAC4DHM Sensitive Gate Triacs Silicon Bidirectional Thyristors
MAC4DHM-001 Sensitive Gate Triacs Silicon Bidirectional Thyristors
MAC4DHMT4 Sensitive Gate Triacs Silicon Bidirectional Thyristors
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MAC4DCN-001G 制造商:ON Semiconductor 功能描述:Thyristor TRIAC 800V 40A 3-Pin(3+Tab) IPAK Rail
MAC4DCN-1G 功能描述:雙向可控硅 THY 4A 800V TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB
MAC4DCNT4 功能描述:雙向可控硅 THY 4A 800V TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB
MAC4DCNT4G 功能描述:雙向可控硅 THY 4A 800V TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB
MAC4DHM 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Sensitive Gate Triacs Silicon Bidirectional Thyristors
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