參數(shù)資料
型號(hào): MAC4DCNT4
廠商: ON SEMICONDUCTOR
元件分類: 晶閘管
英文描述: Triacs Silicon Bidirectional Thyristors
中文描述: 800 V, 4 A, TRIAC
封裝: PLASTIC, CASE 369C, DPAK-3
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 156K
代理商: MAC4DCNT4
3
Motorola Thyristor Device Data
Figure 1. RMS Current Derating
Figure 2. On–State Power Dissipation
Figure 3. On–State Characteristics
Figure 4. Transient Thermal Response
Figure 5. Typical Gate Trigger Current versus
Junction Temperature
Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature
2.5
4.0
0
IT(RMS), RMS ON–STATE CURRENT (AMPS)
125
120
115
IT(RMS), RMS ON–STATE CURRENT (AMPS)
3.0
4.0
0
4.0
2.0
1.0
0
5.0
0
VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)
100
10
1.0
0.1
t, TIME (ms)
1.0
0.1
1.0
0.1
0.01
4.0
–25
25
–50
TJ, JUNCTION TEMPERATURE (
°
C)
60
30
20
0
TJ, JUNCTION TEMPERATURE (
°
C)
–25
100
–50
1.2
0.8
0.6
0.2
25
0
T
P
I
T
r
110
105
0.5
1.0
1.5
2.0
3.0
3.5
1.0
2.0
3.0
5.0
6.0
1.0
2.0
3.0
10
100
1000
10 k
,
I
50
125
75
40
0
125
50
75
0.4
V
°
,
(
,
100
50
dc
180
°
120
°
90
°
60
°
= 30
°
dc
180
°
120
°
90
°
60
°
TYPICAL @ TJ = 25
°
C
MAXIMUM @ TJ = 25
°
C
MAXIMUM @ TJ = 125
°
C
ZJC(t) = RJC(t)r(t)
Q3
Q2
Q1
Q3
Q2
Q1
α
α
= CONDUCTION ANGLE
α
α
= CONDUCTION ANGLE
= 30
°
10
0
1.0
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