參數(shù)資料
型號: M63812FP
元件分類: 小信號晶體管
英文描述: 300 mA, 35 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: 16P2N-A, 16 PIN
文件頁數(shù): 2/5頁
文件大小: 67K
代理商: M63812FP
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63812P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
Duty Cycle no more than 45%
Duty Cycle no more than 100%
Duty Cycle no more than 30%
Duty Cycle no more than 100%
Duty Cycle no more than 24%
Duty Cycle no more than 100%
Duty Cycle no more than 24%
Duty Cycle no more than 100%
ton
toff
50%
OUTPUT
INPUT
(1)Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10
s, tr = 6ns, tf = 6ns, Zo = 50, VIH = 18V
(2)Input-output conditions : RL=220
,Vo=35V
(3)Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
OUTPUT
INPUT
Vo
Measured device
PG
50
RL
CL
OPEN
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85
°C)
V (BR) CEO
VIN(on)
VR
IR
hFE
V
A
35
13
50
19
1.2
0.2
0.8
23
2.0
10
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
V
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
Collector-emitter breakdown voltage
“On” input voltage
Clamping diode forward volltage
Clamping diode reverse current
DC amplification factor
ICEO = 10
A
IIN = 1mA, IC = 10mA
IIN = 2mA, IC = 150mA
IIN = 1mA, IC = 10mA
IF = 250mA
VR = 35V
VCE = 10V, IC = 10mA
VCE(sat)
Collector-emitter saturation voltage
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25
°C)
VO
V
0
35
250
160
250
130
250
120
250
120
30
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
Output voltage
mA
V
IC
VIN
Input voltage
Collector current
(Current per 1 cir-
cuit when 7 circuits
are coming on si-
multaneously)
M63812P
M63812FP
M63812GP
M63812KP
ns
140
240
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
Turn-on time
Turn-off time
ton
toff
CL = 15pF (note 1)
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25
°C)
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PDF描述
M63812GP 300 mA, 35 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M63812GP 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
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