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參數(shù)資料
| 型號： | M63812GP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 300 mA, 35 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | 16P2S-A, 16 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 67K |
| 代理商： | M63812GP |
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63812P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
IN7
→ 7
10
IN5
→ 5
12
IN4
→ 4
13
IN3
→ 3
IN2
→ 2
15
1
IN1
→
16
GND
→COM COMMOM
9
8
IN6
→ 611
→O1
→O2
→O3
→O4
→O5
→O6
→O7
14
16P4(P)
16P2N-A(FP)
16P2S-A(GP)
16P2Z-A(KP)
INPUT
OUTPUT
Package type
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Unit:
The seven circuits share the COM and GND.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
INPUT
OUTPUT
GND
10.5k
10k
Vz=7V
COM
PIN CONFIGURATION
DESCRIPTION
M63812P, M63812FP, M63812GP and M63812KP are
seven-circuit Singe transistor arrays with clamping diodes.
The circuits are made of NPN transistors. Both the semicon-
ductor integrated circuits perform high-current driving with
extremely low input-current supply.
FEATURES
q
Four package configurations (P, FP, GP and KP)
q Medium breakdown voltage (BVCEO
≥35V)
q
Synchronizing current (IC(max) = 300mA)
q
With clamping diodes
q
With zener diodes
q
Low output saturation voltage
q
Wide operating temperature range (Ta=–40 to +85
°C)
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
FUNCTION
The M63812P, M63812FP, M63812GP and M63812KP each
have seven circuits consisting of NPN transistor.A spike-
killer clamping diode is provided between each output pin
(collector) and COM pin (pin9). The transistor emitters are all
connected to the GND pin (pin 8). The transistors allow syn-
chronous flow of 300mA collector current. A maximum of 35V
voltage can be applied between the collector and emitter.
CIRCUIT DIAGRAM
V
mA
V
mA
V
W
°C
–0.5 ~ +35
300
–0.5 ~ +35
300
35
1.47
1.00
0.80
0.78
–40 ~ +85
–55 ~ +125
Ratings
Symbol
Parameter
Conditions
Unit
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85
°C)
Output, H
Current per circuit output, L
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
Ta = 25
°C, when mounted
on board
M63812P
M63812FP
M63812GP
M63812KP
相關(guān)PDF資料 |
PDF描述 |
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| M63813FP | 300 mA, 35 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| M63813P | 300 mA, 35 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| M63816KP | 300 mA, 35 V, 8 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| M63816FP | 300 mA, 35 V, 8 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| M63816P | 300 mA, 35 V, 8 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M63812KP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE |
| M63812P | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE |
| M63813FP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE |
| M63813GP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE |
| M63813KP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE |
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