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參數(shù)資料
| 型號(hào)： | M63813FP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 300 mA, 35 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | 16P2N-A, 16 PIN |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 67K |
| 代理商： | M63813FP |
Jan. 2000
PRELIMINARY
Notice:
This
is not
a final
specification.
Some
parametric
limits
are
subject
to change.
Unit:
The seven circuits share the COM and GND.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
INPUT
OUTPUT
GND
2.7k
10k
COM
16P4(P)
16P2N-A(FP)
16P2S-A(GP)
16P2Z-A(KP)
Package type
IN7→
7
10
IN5→
5
12
INPUT
OUTPUT
IN4→
4
13
INz3
→ 3
IN2→
2
15
1
IN1→
16
GND
→COM COMMOM
9
8
IN6→
611
→O1
→O2
→O3
→O4
→O5
→O6
→O7
14
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63813P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
PIN CONFIGURATION
DESCRIPTION
M63813P/FP/GP/KP are seven-circuit Single transistor ar-
rays with clamping diodes. The circuits are made of NPN
transistors. Both the semiconductor integrated circuits per-
form high-current driving with extremely low input-current
supply.
FEATURES
q
Four package configurations (P, FP, GP and KP)
q Medium breakdown voltage (BVCEO
≥ 35V)
q
Synchronizing current (IC(max) = 300mA)
q
With clamping diodes
q
Low output saturation voltage
q
Wide operating temperature range (Ta = –40 to +85
°C)
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
FUNCTION
The M63813P/FP/GP/KP each have seven circuits consist-
ing of NPN transistor. A spike-killer clamping diode is pro-
vided between each output pin (collector) and COM pin
(pin9). The transistor emitters are all connected to the GND
pin (pin 8). The transistors allow synchronous flow of 300mA
collector current. A maximum of 35V voltage can be applied
between the collector and emitter.
CIRCUIT DIAGRAM
V
mA
V
mA
V
W
°C
–0.5 ~ +35
300
–0.5 ~ +35
300
35
1.47
1.00
0.80
0.78
–40 ~ +85
–55 ~ +125
Ratings
Symbol
Parameter
Conditions
Unit
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85
°C)
Output, H
Current per circuit output, L
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
Ta = 25
°C, when mounted
on board
M63813P
M63813FP
M63813GP
M63813KP
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| M63816FP | 300 mA, 35 V, 8 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M63813GP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE |
| M63813KP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE |
| M63813P | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE |
| M63814FP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE |
| M63814GP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE |
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