參數資料
型號: M63806KP
元件分類: 小信號晶體管
英文描述: 300 mA, 35 V, 8 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: 20P2E-A, 20 PIN
文件頁數: 2/5頁
文件大?。?/td> 64K
代理商: M63806KP
Jan. 2000
PRELIMINARY
Notice:
This
is not
a final
specification.
Some
parametric
limits
are
subject
to change.
M63806P
M63806FP
M63806KP
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63806P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY
Duty Cycle no more than 50%
Duty Cycle no more than 100%
Duty Cycle no more than 30%
Duty Cycle no more than 100%
Duty Cycle no more than 12%
Duty Cycle no more than 100%
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85
°C)
V (BR) CEO
VIN(on)
hFE
V
35
2.4
50
3.5
0.2
0.8
4.2
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
V
Collector-emitter breakdown voltage
“On” input voltage
DC amplification factor
ICEO = 10
A
IIN = 1mA, IC = 10mA
IIN = 2mA, IC = 150mA
IIN = 1mA, IC = 10mA
VCE = 10V, IC = 10mA
VCE(sat)
Collector-emitter saturation voltage
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25
°C)
VO
V
0
35
250
170
250
130
250
100
20
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
Output voltage
mA
V
IC
VIN
Input voltage
Collector current
(Current per 1 cir-
cuit when 8 circuits
are coming on si-
multaneously)
M63806P
M63806FP
M63806KP
ns
125
250
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
Turn-on time
Turn-off time
ton
toff
CL = 15pF (note 1)
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25
°C)
Collector-emitter voltage
Collector current
Input voltage
Power dissipation
Operating temperature
Storage temperature
V
mA
V
W
°C
–0.5 ~ +35
300
–0.5 ~ +35
1.79
1.10
0.68
–40 ~ +85
–55 ~ +125
Ratings
Symbol
Parameter
Conditions
Unit
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85
°C)
Output, H
Current per circuit output, L
VCEO
IC
VI
Pd
Topr
Tstg
Ta = 25
°C, when mounted
on board
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