參數(shù)資料
型號(hào)： M5M4V64S30ATP-8
廠商： Mitsubishi Electric Corporation
元件分類： 功率晶體管
英文描述： 30V N-Channel PowerTrench MOSFET
中文描述： 30V的N溝道的PowerTrench MOSFET的
文件頁數(shù)： 23/51頁
文件大?。?/td> 1161K
代理商： M5M4V64S30ATP-8
MITSUBISHI LSIs
MITSUBISHI ELECTRIC
M5M4V64S20ATP-8A,-8L,-8, -10L, -10
64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
SDRAM (Rev.1.3)
Mar98
[ Write Interrupted by Precharge ]
Burst write operation can be interrupted by precharge of
the same bank
. Random column access is al-
lowed. Write recovery time (tWR) is required from the last data to PRE command.
Write Interrupted by Precharge (BL=4)
CLK
Command
A0-9
A10
BA0,1
DQ
Write
Yi
0
00
PRE
0
00
DQM
ACT
Xb
Xb
00
tWR
tRP
A11
Xb
Dai0
Dai1
Dai2
23
[ Write Interrupted by Burst Terminate ]
A burst terminate command TBST can be used to terminate a burst write operation. In this case,
the write recovery time is not required and the bank remains active (Please see the waveforms
below). The WRITE to TBST minimum interval is one CLK.
Write Interrupted by Burst Terminate(BL=4)
CLK
Command
A0-9
A10
BA
DQ
WRITE
Yi
0
0
Dai0
DQMU/DQML
(DQM)
TBST
Dai1
Dai2
相關(guān)PDF資料
PDF描述
M5M4V64S30ATP-8A Octal D-Type Edge-Triggered Flip-Flops with 3-State Outputs 20-SOIC -40 to 85
M5M4V64S30ATP-8L Octal D-Type Edge-Triggered Flip-Flops with 3-State Outputs 20-SOIC -40 to 85
M5M4V64S40ATP-10 64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
M5M4V64S40ATP-10L 64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
M5M4V64S40ATP-8 64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M5M4V64S30ATP-8A 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
M5M4V64S30ATP-8L 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
M5M4V64S40ATP-10 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
M5M4V64S40ATP-10L 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
M5M4V64S40ATP-8 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*