參數(shù)資料
型號: M5M4V64S30ATP-8
廠商: Mitsubishi Electric Corporation
元件分類: 功率晶體管
英文描述: 30V N-Channel PowerTrench MOSFET
中文描述: 30V的N溝道的PowerTrench MOSFET的
文件頁數(shù): 14/51頁
文件大小: 1161K
代理商: M5M4V64S30ATP-8
MITSUBISHI LSIs
MITSUBISHI ELECTRIC
M5M4V64S20ATP-8A,-8L,-8, -10L, -10
64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
SDRAM (Rev.1.3)
Mar98
[ /CAS LATENCY ]
/CAS latency, CL, is used to synchronize the first output data with the CLK frequency, i.e., the
speed of CLK determines which CL should be used. First output data is available after CL cycles
from READ command.
/CAS Latency Timing(BL=4)
CLK
Command
Address
X
ACT
READ
Y
tRCD
DQ
Q0
Q1
Q2
Q3
DQ
Q0
Q1
Q2
Q3
CL=2
CL=3
CL=2
CL=3
[ BURST LENGTH ]
The burst length, BL, determines the number of consecutive writes or reads that will be
automatically
performed after the initial write or read command. For BL=1,2,4,8, the output data is tristated
(Hi-Z)
after the last read. For BL=FP (Full Page), the TBST (Burst Terminate) command must be
used to stop the output of data.
Burst Length Timing( CL=2 )
14
CLK
Command
Address
tRCD
DQ
Q0
BL=1
DQ
Q0
Q1
BL=2
DQ
Q0
Q1
Q2
Q3
BL=4
DQ
Q0
Q1
Q2
Q3
BL=8
Q4
Q5
Q6
Q7
ACT
READ
X
Y
DQ
Q0
Q1
Q2
Q3
Q4
Q5
Q6
Q7
Q8
Qm
Q0
Q1
M5M4V64S20A : m=1023
M5M4V64S30A : m=511
M5M4V64S40A : m=255
Full Page counter rolls over
and continues to count.
BL=FP
相關(guān)PDF資料
PDF描述
M5M4V64S30ATP-8A Octal D-Type Edge-Triggered Flip-Flops with 3-State Outputs 20-SOIC -40 to 85
M5M4V64S30ATP-8L Octal D-Type Edge-Triggered Flip-Flops with 3-State Outputs 20-SOIC -40 to 85
M5M4V64S40ATP-10 64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
M5M4V64S40ATP-10L 64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
M5M4V64S40ATP-8 64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M5M4V64S30ATP-8A 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
M5M4V64S30ATP-8L 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
M5M4V64S40ATP-10 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
M5M4V64S40ATP-10L 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
M5M4V64S40ATP-8 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM