參數(shù)資料
型號(hào): M5M4V64S30ATP-12
廠商: Mitsubishi Electric Corporation
英文描述: 64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
中文描述: 64M號(hào)(4銀行甲2097152字× 8位)同步DRAM
文件頁(yè)數(shù): 27/51頁(yè)
文件大?。?/td> 1161K
代理商: M5M4V64S30ATP-12
MITSUBISHI LSIs
MITSUBISHI ELECTRIC
M5M4V64S20ATP-8A,-8L,-8, -10L, -10
64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
SDRAM (Rev.1.3)
Mar98
DQM CONTROL
DQM is a dual function signal defined as the data mask for writes and the output disable for reads.
During writes, DQM masks input data word by word. DQM to write mask latency is 0.
During reads, DQM forces output to Hi-Z word by word. DQM to output Hi-Z latency is 2.
DQM Function
CLK
Command
DQ
Write
D0
D2
D3
DQM
READ
Q0
Q1
Q3
masked by DQM=H
disabled by DQM=H
27
相關(guān)PDF資料
PDF描述
M5M4V64S30ATP-8 30V N-Channel PowerTrench MOSFET
M5M4V64S30ATP-8A Octal D-Type Edge-Triggered Flip-Flops with 3-State Outputs 20-SOIC -40 to 85
M5M4V64S30ATP-8L Octal D-Type Edge-Triggered Flip-Flops with 3-State Outputs 20-SOIC -40 to 85
M5M4V64S40ATP-10 64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M5M4V64S30ATP-8 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
M5M4V64S30ATP-8A 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
M5M4V64S30ATP-8L 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
M5M4V64S40ATP-10 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
M5M4V64S40ATP-10L 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM