參數(shù)資料
型號(hào)： M5M4V64S30ATP-10
廠商： Mitsubishi Electric Corporation
英文描述： Octal D-Type Transparent Latches With 3-State Outputs 20-TSSOP -40 to 85
中文描述： 64M號(hào)（4銀行甲4194304字× 4位）同步DRAM
文件頁(yè)數(shù)： 26/51頁(yè)
文件大小： 1161K
代理商： M5M4V64S30ATP-10
MITSUBISHI LSIs
MITSUBISHI ELECTRIC
M5M4V64S20ATP-8A,-8L,-8, -10L, -10
64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
SDRAM (Rev.1.3)
Mar98
CLK SUSPEND
CKE controls the internal CLK at the following cycle. Figure below shows how CKE works. By negating
CKE, the next internal CLK is suspended. The purpose of CLK suspend is power down, output suspend or
input suspend. CKE is a synchronous input except during the self-refresh mode. CLK suspend can be per-
formed either when the banks are active or idle. A command at the suspended cycle is ignored.
Power Down by CKE
CLK
Command
PRE
CKE
Command
CKE
ACT
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Standby Power Down
Active Power Down
NOP
NOP
ext.CLK
CKE
int.CLK
DQ Suspend by CKE
CLK
Command
DQ
Write
D0
CKE
READ
Q0
Q1
Q2
Q3
D1
D2
D3
26
相關(guān)PDF資料
PDF描述
M5M4V64S30ATP-12 64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
M5M4V64S30ATP-8 30V N-Channel PowerTrench MOSFET
M5M4V64S30ATP-8A Octal D-Type Edge-Triggered Flip-Flops with 3-State Outputs 20-SOIC -40 to 85
M5M4V64S30ATP-8L Octal D-Type Edge-Triggered Flip-Flops with 3-State Outputs 20-SOIC -40 to 85
M5M4V64S40ATP-10 64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M5M4V64S30ATP-10L 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
M5M4V64S30ATP-12 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
M5M4V64S30ATP-8 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
M5M4V64S30ATP-8A 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
M5M4V64S30ATP-8L 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
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