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參數(shù)資料
| 型號(hào)： | M5M4V16G50DFP-12 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 16M (2-BANK x 262144-WORD x 32-BIT) Synchronous Graphics RAM |
| 中文描述： | 1,600（2 -銀行甲262144字× 32位）同步圖形RAM |
| 文件頁數(shù)： | 25/33頁 |
| 文件大?。?/td> | 167K |
| 代理商： | M5M4V16G50DFP-12 |
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M5M4V16G50DFP -8, -10, -12
Jan'97
Preliminary
MITSUBISHI LSIs
16M (2-BANK x 262144-WORD x 32-BIT) Synchronous Graphics RAM
MITSUBISHI ELECTRIC
SGRAM (Rev. 0.0)
[ Write Interrupted by Precharge ]
Burst write operation can be interrupted by precharge of the same bank. Random column access is al-
lowed.
[ Write Interrupted by Burst Terminate ]
Burst terminate command can terminate burst write operation. In this case, the write recovery time is not
required and the bank remains active. The figure below shows the case that 3 words of data are written.
Random column access is allowed. WRITE to TERM interval is minimum 1 CLK.
Write Interrupted by Precharge (BL=4)
CLK
Command
A0-8
A89
A10
DQ
Write
Yi
0
0
PRE
0
0
Dai0
Dai1
DQM0-3
ACT
Xb
Xb
0
tWR
tRP
Write Interrupted by Burst Terminate (BL=4)
CLK
Command
A0-8
A9
A10
DQ
Write
Yi
0
0
TERM
Dai0
Dai1
DQM0-3
Dai2
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PDF描述 |
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| M5M4V16G50DFP-8 | 16M (2-BANK x 262144-WORD x 32-BIT) Synchronous Graphics RAM |
| M5M4V64S20ATP-10 | 64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM |
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| M5M4V64S20ATP-12 | 64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM |
| M5M4V64S20ATP-8 | 64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M5M4V16G50DFP-8 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16M (2-BANK x 262144-WORD x 32-BIT) Synchronous Graphics RAM |
| M5M4V17400CTP-60 | 制造商:Mitsubishi Electric 功能描述: |
| M5M4V18165CJ-7S | 制造商:MITSUBI 功能描述:Electronic Component |
| M5M4V4169TP20 | 制造商:MITSU 功能描述: |
| M5M4V4265CJ | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:EDO (HYPER PAGE) MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM |
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