參數(shù)資料
型號: M5M4V16G50DFP-12
廠商: Mitsubishi Electric Corporation
英文描述: 16M (2-BANK x 262144-WORD x 32-BIT) Synchronous Graphics RAM
中文描述: 1,600(2 -銀行甲262144字× 32位)同步圖形RAM
文件頁數(shù): 24/33頁
文件大?。?/td> 167K
代理商: M5M4V16G50DFP-12
M5M4V16G50DFP -8, -10, -12
Jan'97
Preliminary
MITSUBISHI LSIs
16M (2-BANK x 262144-WORD x 32-BIT) Synchronous Graphics RAM
MITSUBISHI ELECTRIC
SGRAM (Rev. 0.0)
[ Write Interrupted by Write ]
Burst write operation can be interrupted by new write of the same or the other bank. Random column
access is allowed. WRITE to WRITE interval is minimum 1 CLK.
[ Write Interrupted by Read ]
Burst write operation can be interrupted by read of the same or the other bank. Random column access is
allowed. WRITE to READ interval is minimum 1 CLK. The input data on DQ at the interrupting READ
cycle is “don’t care”.
Write Interrupted by Write (BL=4)
CLK
Command
A0-8
A9
A10
DQ
Write
Yi
0
0
Write
Yk
0
1
Dai0
Daj0
Daj1
Dbk0
Write
Yj
0
0
Dbk1 Dbk2
Write
Yl
0
0
Dal0
Dal1
Dal2
Dal3
Write Interrupted by Read (BL=4, CL=3)
CLK
Command
A0-8
A9
A10
DQ
Write
Yi
0
0
Qaj0
READ
Yj
0
0
Qaj1
Dai0
Dak0 Dak1
DQM0-3
Write
Yk
0
0
READ
Yl
0
1
Qbl0
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