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參數(shù)資料
| 型號(hào)： | M5M4V16169DRT-15 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| 中文描述： | 16MCDRAM：16米（100萬字由16位）與16K的緩存內(nèi)存（1024字由16位）的SRAM |
| 文件頁數(shù)： | 42/64頁 |
| 文件大?。?/td> | 737K |
| 代理商： | M5M4V16169DRT-15 |
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M5M4V16169DTP/RT-7,-8,-10,-15
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
MITSUBISHI LSIs
(REV 1.0) Jul. 1998
MITSUBISHI ELECTRIC
DRAM Self Refresh
Self Refresh Entry:
(Note: DRAM must be in Precharge state prior to Self-Refresh Entry)
Previous CMd#=H, Present CMd#=L, CS#=RAS#=CAS#=L, DTD#=H
(CMd# must remain low to maintain Self Refresh).
Self Refresh Exit (in order):
a) resume K clock
b) CMd#=H
c) Wait tRC for recovery
d) Resume normal operation
K
2
3
4
1
RAS#
CAS#
DTD#
Ad0-11
CMd#
Self Refresh
Entry
Self Refresh Mode
SRAM Power Down Mode
tRC for Recovery
CS#
Self Refresh
SRAM Power Down
Exit
H
L
1
2
3
4
5
6
L
Inhibit falling edge.
L
L
Row
DNOPDNOP
SRF Halt
Halt
Halt
DNOPDNOPDNOPDNOP
ACT
DNOP
H
H
42
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| M5M4V16169DRT-7 | 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M5M4V16169DRT-7 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| M5M4V16169DRT-8 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| M5M4V16169DTP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| M5M4V16169DTP-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| M5M4V16169DTP-15 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
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