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參數(shù)資料
| 型號(hào)： | M5M4V16169DRT-15 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| 中文描述： | 16MCDRAM：16米（100萬(wàn)字由16位）與16K的緩存內(nèi)存（1024字由16位）的SRAM |
| 文件頁(yè)數(shù)： | 26/64頁(yè) |
| 文件大?。?/td> | 737K |
| 代理商： | M5M4V16169DRT-15 |
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M5M4V16169DTP/RT-7,-8,-10,-15
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
**-15 spec is the same as M5M4V16169TP/RT-15
MITSUBISHI LSIs
(REV 1.0) Jul. 1998
MITSUBISHI ELECTRIC
AVERAGE SUPPLY CURRENT from Vcc
(Ta=0~70°C , Vdd=3.3±0.3V for -8,and -10, Vdd=3.3±0.15V for -7
Vss=0V, unless otherwise noted)
Symbol
Condition
Limits (MAX)
-8
output open
IccS
Average supply current of SRAM operating, tK=min.
DRAM=DPD
IccD
Average supply current of DRAM operating, tRC=min.
SRAM=SPD
Average supply current of DRAM page-mode tPC=min.
SRAM=SPD
Icc(STN1)
LVTTL standby, tK=min, DRAM=DNOP&SRAM=DES,
or NOP all input=stable.
Icc(STN2)
CMOS standby, tK=min, DRAM=DNOP&SRAM+DES,
or NOP all input=stable.
Icc(PD)
CMOS Power Down current, CMd#=CMs#=L,tK=min.
* VOH(AC) and VOL(AC) are the reference levels for AC measurements.
VOH(DC) and VOL(DC) are the final levels the outputs reach.
AC OPERATING CONDITIONS AND CHARACTERISTICS
Symbol
Parameter
Test Condition
Limits
Unit
Min.
2.4
-
Max
V
V
uA
uA
I
OZ
I
I
Off-state Output Current
Input Current
Q floating VO=0
~
VddQ
V
IH
=0 ~VddQ+0.3V
-10
-10
10
10
-10
5
Icc(SRF)
CMOS Self Refresh current, CMd#=CMs#=L,tK=
1
1
5
IccD(PG)
output open
output open
data input=H or L
data input=H or L
data input=H or L
-7
5
1
VTT
50ohm
30pF
V
OUT
AC Condition
(Access Time)
260
240
200
160
150
130
140
130
110
60
60
50
50
50
40
26
VOH(DC)*(LVTTL)
VOL(DC)*(LVTTL)
High-level Output Voltage (DC)
Low-level Output Voltage (DC)
IOH= -2mA
IOL= 2mA
0.4
-
Unit
mA
mA
mA
mA
mA
mA
mA
-15
1
5
140
100
80
30
25
(Ta=0~70°C , Vdd=3.3±0.3V for -8,and -10, Vdd=3.3±0.15V for -7
Vss=0V, unless otherwise noted)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| M5M4V16169DRT-7 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| M5M4V16169DRT-8 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| M5M4V16169DTP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| M5M4V16169DTP-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| M5M4V16169DTP-15 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
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