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| 型號(hào)： | M5M29GT160BVP-80 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| 中文描述： | 16,777,216位（2097,152 - Word的8位/ 1048,576字BY16位）的CMOS 3.3只，塊擦除閃存 |
| 文件頁(yè)數(shù)： | 7/25頁(yè) |
| 文件大?。?/td> | 229K |
| 代理商： | M5M29GT160BVP-80 |
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MITSUBISHI LSIs
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB/T160BVP-80
Sep 1999. Rev2.0
7
1) X at
RY/BY# is V
OL
or V
OH(Hi-Z)
.
*The RY/BY# is an open drain output pin and indicates status of the internal WSM. When low,it indicates that the WSM is Busy performing an operation.
A pull-up resistor of 10K-100K Ohms is required to allow the RY/BY# signal to transition high indicating a Ready WSM condition.
2) X can be V
IH
or V
IL
for control pins.
BUS OPERATIONS
Bus Operations for Word-Wide Mode
1)
Mode
Array
Status Register
Lock Bit Status
Identifier Code
Stand by
Program
Erase
Others
Write
Read
Pins
CE#
OE#
WE#
V
IL
V
IL
V
IL
V
IL
V
IL
V
IH
V
IL
V
IL
V
IL
V
IL
V
IL
V
IL
V
IL
V
IH
X
V
IH
V
IH
V
IH
X
V
IH
V
IH
V
IH
V
IH
V
IH
X
V
IL
V
IL
V
IL
X
Data out
Status Register Data
Lock Bit Data (DQ
6
)
Identifier Code
Hi-Z
Hi-Z
Command/Data in
Command
Command
Output disable
Deep Power Down
RP#
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IL
RY/BY#
V
OH (Hi-Z)
X
X
V
OH (Hi-Z)
X
X
X
X
X
X
Hi-Z
DQ
0-15
2)
V
OH (Hi-Z)
Bus Operations for Byte-Wide Mode
1)
Mode
Array
Status Register
Lock Bit Status
Identifier Code
Stand by
Program
Erase
Others
Write
Read
Pins
CE#
OE#
WE#
DQ
0-7
V
IL
V
IL
V
IL
V
IL
V
IL
V
IH
V
IL
V
IL
V
IL
V
IL
V
IL
V
IL
V
IL
V
IH
X
V
IH
V
IH
V
IH
X
V
IH
V
IH
V
IH
V
IH
V
IH
X
V
IL
V
IL
V
IL
X
Data out
Status Register Data
Lock Bit Data (DQ
6
)
Identifier Code
Hi-Z
Hi-Z
Command/Data in
Command
Command
Output disable
Deep Power Down
RP#
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IL
RY/BY#
X
X
X
X
X
X
X
X
Hi-Z
2)
V
OH (Hi-Z)
V
OH (Hi-Z)
V
OH (Hi-Z)
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| M5M29GT160BWG | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29GT161BVP | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29GT161BWG | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
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