參數(shù)資料
型號(hào)： M5M29GT160BVP-80
廠商： Mitsubishi Electric Corporation
英文描述： 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
中文描述： 16,777,216位（2097,152 - Word的8位/ 1048,576字BY16位）的CMOS 3.3只，塊擦除閃存
文件頁數(shù)： 13/25頁
文件大小： 229K
代理商： M5M29GT160BVP-80
MITSUBISHI LSIs
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB/T160BVP-80
Sep 1999. Rev2.0
13
3.3V
GND
V
CC
Vcc POWER UP / DOWN TIMING
V
IH
V
IL
RP#
Read /Write Inhibit
t
VCS
V
IH
V
IL
CE#
V
IH
V
IL
WE#
t
PS
t
PS
Read /Write Inhibit
Read /Write Inhibit
TEST CONDITIONS
FOR AC CHARACTERISTICS
Input voltage : V
IL
= 0V, V
IH
= 3.0V
Input rise and fall times :
￡
5ns
Reference voltage
at timing measurement : 1.5V
Output load : 1TTL gate +
CL(30pF)
or
AC WAVEFORMS FOR READ OPERATION AND TEST CONDITIONS
OUTPUT VALID
HIGH-Z
t
DF(OE)
t
RC
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
OH
V
OL
ADDRESSES
CE#
OE#
WE#
DATA
ADDRESS VALID
t
OH
t
OLZ
t
a (CE)
t
OEH
t
CLZ
t
a (AD)
t
a (OE)
HIGH-Z
DUT
3.3k
W
1N914
1.3V
C
L
=30pF
V
IH
V
IL
RP#
t
PS
t
DF(CE)
t
PHZ
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M5M29GT160BWG 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GT161BVP 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GT161BWG 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GT320VP 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GT320VP-80 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
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