參數(shù)資料
型號： M5M29GB160BVP
廠商： Mitsubishi Electric Corporation
英文描述： 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
中文描述： 16,777,216位（2097,152 - Word的8位/ 1048,576字BY16位）的CMOS 3.3只，塊擦除閃存
文件頁數(shù)： 7/25頁
文件大小： 229K
代理商： M5M29GB160BVP
MITSUBISHI LSIs
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB/T160BVP-80
Sep 1999. Rev2.0
7
1) X at
RY/BY# is V
OL
or V
OH(Hi-Z)
.
*The RY/BY# is an open drain output pin and indicates status of the internal WSM. When low,it indicates that the WSM is Busy performing an operation.
A pull-up resistor of 10K-100K Ohms is required to allow the RY/BY# signal to transition high indicating a Ready WSM condition.
2) X can be V
IH
or V
IL
for control pins.
BUS OPERATIONS
Bus Operations for Word-Wide Mode
1)
Mode
Array
Status Register
Lock Bit Status
Identifier Code
Stand by
Program
Erase
Others
Write
Read
Pins
CE#
OE#
WE#
V
IL
V
IL
V
IL
V
IL
V
IL
V
IH
V
IL
V
IL
V
IL
V
IL
V
IL
V
IL
V
IL
V
IH
X
V
IH
V
IH
V
IH
X
V
IH
V
IH
V
IH
V
IH
V
IH
X
V
IL
V
IL
V
IL
X
Data out
Status Register Data
Lock Bit Data (DQ
6
)
Identifier Code
Hi-Z
Hi-Z
Command/Data in
Command
Command
Output disable
Deep Power Down
RP#
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IL
RY/BY#
V
OH (Hi-Z)
X
X
V
OH (Hi-Z)
X
X
X
X
X
X
Hi-Z
DQ
0-15
2)
V
OH (Hi-Z)
Bus Operations for Byte-Wide Mode
1)
Mode
Array
Status Register
Lock Bit Status
Identifier Code
Stand by
Program
Erase
Others
Write
Read
Pins
CE#
OE#
WE#
DQ
0-7
V
IL
V
IL
V
IL
V
IL
V
IL
V
IH
V
IL
V
IL
V
IL
V
IL
V
IL
V
IL
V
IL
V
IH
X
V
IH
V
IH
V
IH
X
V
IH
V
IH
V
IH
V
IH
V
IH
X
V
IL
V
IL
V
IL
X
Data out
Status Register Data
Lock Bit Data (DQ
6
)
Identifier Code
Hi-Z
Hi-Z
Command/Data in
Command
Command
Output disable
Deep Power Down
RP#
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IL
RY/BY#
X
X
X
X
X
X
X
X
Hi-Z
2)
V
OH (Hi-Z)
V
OH (Hi-Z)
V
OH (Hi-Z)
相關(guān)PDF資料
PDF描述
M5M29GB160BVP-80 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
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M5M29GT160BVP-80 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M5M29GB160BVP-80 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB160BWG 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB161BVP 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB161BWG 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB320VP 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
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