參數(shù)資料
型號(hào)： M5M29GB160BVP
廠商： Mitsubishi Electric Corporation
英文描述： 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
中文描述： 16,777,216位（2097,152 - Word的8位/ 1048,576字BY16位）的CMOS 3.3只，塊擦除閃存
文件頁(yè)數(shù)： 11/25頁(yè)
文件大?。?/td> 229K
代理商： M5M29GB160BVP
MITSUBISHI LSIs
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB/T160BVP-80
Sep 1999. Rev2.0
11
Read-Only Mode
AC ELECTRICAL CHARACTERISTICS
(Ta = -40 ~85
°
C)
Read timing parameters during command write operations mode are the same as during read-only operations mode.
Typical values at Vcc=3.3V, Ta=25
°
C
AC ELECTRICAL CHARACTERISTICS
(Ta = -40 ~85
°
C)
Write Mode
(WE# control)
Symbol
Parameter
Write cycle time
Address set-up time
Data hold time
OE# hold from WE# high
Latency between Read and Write FFH or 71H
Data set-up time
Address hold time
t
AVAV
t
AVWH
t
WHDX
t
WHGL
-
t
DVWH
t
WHAX
t
WC
t
AS
t
DH
t
OEH
t
RE
t
DS
t
AH
Limits
80
50
0
50
0
10
30
Max
Min
Typ
Unit
ns
ns
ns
ns
ns
ns
ns
90
50
0
50
0
10
30
Max
Min
Typ
Write pulse width
Write pulse width high
Byte enable high or low set-up time
Byte enable high or low hold time
Chip enable hold time
Chip enable set-up time
Block Lockhold from valid SRD
Duration of auto-program operation
Duration of auto-block erase operation
Write enable high to F-RY/BY# low
Block Lock set-up to write enable high
t
WLWH
t
WHWL
t
FL/HWH
t
WHFL/H
t
WHEH
t
ELWL
t
QVPH
t
WHRH1
t
WHRH2
t
WHRL
t
PHHWH
t
WP
t
WPH
t
BS
t
BH
t
CH
t
CS
t
BLS
t
BLH
t
DAP
t
DAE
t
WHRL
OE# hold to WE# Low
t
GHWL
t
GHWL
4
40
80
600
90
60
30
50
80
0
0
0
80
0
ns
ns
ns
ns
ns
ns
ns
ms
ms
ns
ns
4
40
80
600
90
60
30
50
90
0
0
0
90
ns
0
Symbol
Parameter
t
a (AD)
t
a (CE)
t
a (OE)
Address access time
Chip enable access time
Output enable access time
t
AVQV
t
ELQV
t
GLQV
t
CLZ
t
DF(CE)
t
OLZ
t
DF(OE)
t
PHZ
t
a(BYTE)
t
BHZ
Chip enable to output in low-Z
Chip enable high to output in high Z
Output enable to output in low-Z
Output enable high to output in high Z
RP# low to output high-Z
t
ELQX
t
EHQZ
t
GLQX
t
GHQZ
t
PLQZ
t
FL/HQV
t
FLQZ
t
RC
Read cycle time
t
AVAV
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
80
80
30
0
25
80
0
25
150
Max
Min
Typ
90
90
30
0
25
90
0
25
150
Max
Min
Typ
Limits
Speed Item: -80
Vcc=2.7~3.6V
Vcc=3.3V+/-0.3V
Speed Item: -80
Vcc=2.7~3.6V
Vcc=3.3V+/-0.3V
Timing measurements are made under AC waveforms for read operations.
t
WHGL
OE# hold from WE# high
t
OEH
t
BAD
t
AVFL/H
RP# recovery to CE# low
ns
ns
ns
t
PS
t
PHEL
10
0
150
10
0
150
t
ELFL/H
F-CE# low to BYTE# high or low
Address to BYTE# high or low
t
BCD
t
OH
Output hold from CE#, OE#, addresses
t
OH
5
5
5
5
BYTE# access time
BYTE# low to output high-Z
80
25
90
25
ns
0
RP# high recovery to write enable low
t
PHWL
t
PS
150
ns
150
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M5M29GB160BVP-80 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB160BWG 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB161BVP 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB161BWG 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB320VP 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
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