參數(shù)資料
型號： M5M29GB160BVP
廠商： Mitsubishi Electric Corporation
英文描述： 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
中文描述： 16,777,216位（2097,152 - Word的8位/ 1048,576字BY16位）的CMOS 3.3只，塊擦除閃存
文件頁數(shù)： 22/25頁
文件大?。?/td> 229K
代理商： M5M29GB160BVP
MITSUBISHI LSIs
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB/T160BVP-80
Sep 1999. Rev2.0
22
FULL STATUS CHECK PROCEDURE
SR.5 = 0
SR.4 = 0
SR.4 =1
and
SR.5 =1
SUCCESSFUL
(BLOCK ERASE, PROGRAM)
YES
YES
YES
NO
STATUS REGISTER
READ
COMMAND SEQUENCE ERROR
NO
BLOCK ERASE ERROR
NO
PROGRAM ERROR
(BLOCK)
WRITE 77H
WRITE D0H
BLOCK ADDRESS
LOCK BIT PROGRAM FLOW CHART
SR.4 = 0
LOCK BIT PROGRAM
SUCCESSFUL
YES
YES
NO
NO
START
LOCK BIT PROGRAM
FAILED
SR.7 = 1
SR.3 = 0
YES
NO
PROGRAM ERROR
(PAGE, LOCK BIT)
PAGE PROGRAM FLOW CHART
START
WRITE 41H
FULL STATUS CHECK
IF DESIRED
PAGE PROGRAM
COMPLETED
YES
n = 0
n = n+1
WRITE
ADDRESS n, DATA n
YES
SR.7 = 1
n = FFH
or
n = 7FH
NO
WRITE B0H
YES
NO
SUSPEND LOOP
WRITE D0H
YES
NO
STATUS REGISTER
READ
BYTE PROGRAM FLOW CHART
START
WRITE 40H
FULL STATUS CHECK
IF DESIRED
PAGE PROGRAM
COMPLETED
YES
WRITE
ADDRESS , DATA
SR.7 = 1
WRITE B0H
YES
NO
SUSPEND LOOP
WRITE D0H
YES
NO
STATUS REGISTER
READ
* Byte program is admitted to only BANK(I).
相關(guān)PDF資料
PDF描述
M5M29GB160BVP-80 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GT160BVP 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GT160BVP-80 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M5M29GB160BVP-80 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB160BWG 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB161BVP 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB161BWG 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB320VP 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
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