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參數(shù)資料
| 型號(hào)： | M59DR032A |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| 中文描述： | 32兆位的2Mb x16插槽，雙行，第低壓閃存 |
| 文件頁數(shù)： | 13/38頁 |
| 文件大?。?/td> | 270K |
| 代理商： | M59DR032A |
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M59DR032A, M59DR032B
20/38
Table 22. DC Characteristics
(TA = 0 to 70°C or –40 to 85°C; VDD = VDDQ = 1.65V to 2.2V)
Note: 1. Sampled only, not 100% tested.
2. VPP may be connected to 12V power supply for a total of less than 100 hrs.
3. For standard program/erase operation VPP is don’t care.
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
ILI
Input Leakage Current
0V
≤ VIN ≤ VDD
±1
A
ILO
Output Leakage Current
0V
≤ VOUT ≤ VDD
±5
A
ICC1
Supply Current
(Read Mode)
E = VIL, G = VIH, f = 6MHz
10
20
mA
ICC2
Supply Current
(Power Down)
RP = VSS ± 0.2V
210
A
ICC3
Supply Current (Standby)
E = VDD ± 0.2V
15
50
A
ICC4
(1)
Supply Current
(Program or Erase)
Word Program, Block Erase
in progress
10
20
mA
ICC5
(1)
Supply Current
(Dual Bank)
Program/Erase in progress
in one Bank, Read in the
other Bank
20
40
mA
IPP1
VPP Supply Current
(Program or Erase)
VPP = 12V ± 0.6V
510
mA
IPP2
VPP Supply Current
(Standby or Read)
VPP ≤ VCC
0.2
5
A
VPP = 12V ± 0.6V
100
400
A
VIL
Input Low Voltage
–0.5
0.4
V
VIH
Input High Voltage
VDDQ –0.4
VDDQ + 0.4
V
VOL
Output Low Voltage
IOL = 100A
0.1
V
VOH
Output High Voltage
CMOS
IOH = –100A
VDDQ –0.1
V
VPP
(2,3)
VPP Supply Voltage
(Program or Erase)
–0.4
VDD + 0.4
V
Double Word Program
11.4
12.6
V
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| M59DR032A100N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032A100N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032A100ZB1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032A100ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032A120N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
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