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參數(shù)資料
| 型號： | M59DR032A |
| 廠商： | 意法半導體 |
| 英文描述： | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| 中文描述： | 32兆位的2Mb x16插槽，雙行，第低壓閃存 |
| 文件頁數(shù)： | 11/38頁 |
| 文件大?。?/td> | 270K |
| 代理商： | M59DR032A |
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M59DR032A, M59DR032B
POWER SUPPLY
Power Down
The memory provides Reset/Power Down control
input RP. The Power Down function can be acti-
vated only if the relevant Configuration Register bit
is set to ’1’. In this case, when the RP signal is
pulled at VSS the supply current drops to typically
ICC2 (see Table 22), the memory is deselected and
the outputs are in high impedance.If RP is pulled
to VSS during a Program or Erase operation, this
operation is aborted in tPLQ7V and the memory
content is no longer valid (see Reset/Power Down
input description).
Power Up
The memory Command Interface is reset on Pow-
er Up to Read Array. Either E or W must be tied to
VIH during Power Up to allow maximum security
and the possibility to write a command on the first
rising edge of W.
Supply Rails
Normal precautions must be taken for supply volt-
age decoupling; each device in a system should
have the VDD rails decoupled with a 0.1F capac-
itor close to the VDD, VDDQ and VSS pins. The PCB
trace widths should be sufficient to carry the re-
quired VDD program and erase currents.
Table 21. Program, Erase Times and Program, Erase Endurance Cycles
(TA = 0 to 70°C; VDD = VDDQ = 1.65V to 2.2V, VPP = VDD unless otherwise specified)
Note: 1. Max values refer to the maximum time allowed by the internal algorithm before error bit is set. Worst case conditions program or
erase should perform significantly better.
2. Excludes the time needed to execute the sequence for program instruction.
Parameter
M59DR032
Unit
Min
Max (1)
Typ
Typical after
100k W/E Cycles
Parameter Block (4 KWord) Erase (Preprogrammed)
2.5
0.15
0.4
sec
Main Block (32 KWord) Erase (Preprogrammed)
10
1
3
sec
Bank Erase (Preprogrammed, Bank A)
2
6
sec
Bank Erase (Preprogrammed, Bank B)
10
30
sec
Chip Program (2)
20
25
sec
Chip Program (DPG, VPP = 12V)
(2)
10
sec
Word Program
200
10
s
Program/Erase Cycles (per Block)
100,000
cycles
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PDF描述 |
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| M59DR032A100N1T | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032A100N6T | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032A100ZB1T | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032A100ZB6T | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032A120N1T | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M59DR032A100N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032A100N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032A100ZB1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032A100ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032A120N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
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