參數(shù)資料
型號(hào)： M58WR064HU70ZB6U
元件分類： PROM
英文描述： 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44
封裝： 7.70 X 9 MM, 0.50 MM PITCH, ROHS COMPLIANT, VFBGA-44
文件頁(yè)數(shù)： 116/117頁(yè)
文件大?。?/td> 2300K
代理商： M58WR064HU70ZB6U
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Common Flash Interface
M58WR064HU M58WR064HL
Table 42.
Bank and erase block region 2 information(1)
M58WR064HU
M58WR064HL
Description
Offset
Data
Offset
Data
(P+28)h = 61h 01h (P+30)h = 69h 0Fh
Number of identical banks within Bank Region 2
(P+29)h = 62h 00h (P+31)h = 6Ah 00h
(P+2A)h = 63h 11h (P+32)h = 6Bh 11h
Number of program or erase operations allowed in Bank
Region 2:
Bits 0-3: Number of simultaneous program operations
Bits 4-7: Number of simultaneous erase operations
(P+2B)h = 64h 00h (P+33)h = 6Ch 00h
Number of program or erase operations allowed in other
banks while a bank in this region is programming
Bits 0-3: Number of simultaneous program operations
Bits 4-7: Number of simultaneous erase operations
(P+2C)h = 65h 00h (P+34)h = 6Dh 00h
Number of program or erase operations allowed in other
banks while a bank in this region is erasing
Bits 0-3: Number of simultaneous program operations
Bits 4-7: Number of simultaneous erase operations
(P+2D)h = 66h 02h (P+35)h = 6Eh 01h
Types of erase block regions in Bank Region 2
n = number of erase block regions with contiguous same-
size erase blocks.
Symmetrically blocked banks have one blocking
region.(2)
(P+2E)h = 67h 06h (P+36)h = 6Fh 07h
Bank Region 2 Erase Block Type 1 Information
Bits 0-15: n+1 = number of identical-sized erase blocks
Bits 16-31: n×256 = number of bytes in erase block
region
(P+2F)h = 68h 00h (P+37)h = 70h 00h
(P+30)h = 69h 00h (P+38)h = 71h 00h
(P+31)h = 6Ah 01h (P+39)h = 72h 01h
(P+32)h = 6Bh 64h (P+3A)h = 73h 64h Bank Region 2 (Erase Block Type 1)
Minimum block erase cycles × 1000
(P+33)h = 6Ch 00h (P+3B)h = 74h 00h
(P+34)h = 6Dh 01h (P+3C)h = 75h 01h
Bank Region 2 (Erase Block Type 1): BIts per cell,
internal ECC
Bits 0-3: bits per cell in erase region
Bit 4: reserved for “internal ECC used”
BIts 5-7: reserved
(P+35)h = 6Eh 03h (P+3D)h = 76h 03h
Bank Region 2 (Erase Block Type 1): Page mode and
synchronous mode capabilities (defined in Table 39)
Bit 0: Page-mode reads permitted
Bit 1: Synchronous reads permitted
Bit 2: Synchronous writes permitted
Bits 3-7: reserved
相關(guān)PDF資料
PDF描述
M59DR032F100N1T 2M X 16 FLASH 1.8V PROM, 100 ns, PDSO48
M5F7924 24 V FIXED NEGATIVE REGULATOR, PSFM3
M5F7920 20 V FIXED NEGATIVE REGULATOR, PSFM3
M5F7918 18 V FIXED NEGATIVE REGULATOR, PSFM3
M5F7915 15 V FIXED NEGATIVE REGULATOR, PSFM3
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58WR064KB70ZB6E 制造商:Micron Technology Inc 功能描述:WIRELESS FLASH VFBGA 7.7X9.0X1.0 56 8X7 0.75 - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 64MBIT 70NS 56VFBGA
M58WR064KB70ZB6F 制造商:Micron Technology Inc 功能描述:FLASH 28F640W18TD 60 VF-PBGA56 SB48 EX - Tape and Reel
M58WR064KB70ZB6F TR 制造商:Micron Technology Inc 功能描述:IC FLASH 64MBIT 70NS 56VFBGA
M58WR064KB7AZB6E 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 64MBIT 70NS 56VFBGA
M58WR064KB7AZB6F 制造商:Micron Technology Inc 功能描述:WIRELESS - Tape and Reel
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