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參數(shù)資料
| 型號： | M58LW128A150ZA6T |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | PROM |
| 英文描述： | 8M X 16 FLASH 3V PROM, 150 ns, PBGA64 |
| 封裝： | 10 X 13 MM, 1 MM PITCH, TBGA-64 |
| 文件頁數(shù)： | 52/65頁 |
| 文件大?。?/td> | 932K |
| 代理商： | M58LW128A150ZA6T |
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Table 34. Extended Query information
Note: 1. DQ31-DQ16 are available in the M58LW128B only. They are in the high-impedance state when the device operates In x16 mode.
Address
offset
Address
A23-A1 (M58LW128A)
A23-A2 (M58LW128B)
DQ31-DQ16(1) DQ15-DQ0
Description
(P)h
31h
0000h
0050h
0050h; “P”
Query ASCII string - Extended Table
0052h; “R”
0049h; “I”
(P+1)h
32h
0000h
0052h
(P+2)h
33h
0000h
0049h
(P+3)h
34h
0000h
0031h
Major version number
(P+4)h
35h
0000h
0031h
Minor version number
(P+5)h
36h
0000h
008Eh
Optional Feature: (1=yes, 0=no)
bit0, Chip Erase Supported (0=no)
bit1, Suspend Erase Supported (1=yes)
bit2, Suspend Program Supported (1=yes)
bit3, Protect/Unprotect Supported (1=yes)
bit4, Queue Erase Supported (0=no)
bit5, Instant individual block locking Supported
(0=no)
bit6, Protection Bits Supported (0=no)
bit7, Page Read Supported (1=yes)
bit8, Synchronous Read Supported (1=yes)
Bit 31-9 reserved for future use
(P+6)h
37h
0000h
0001h
(P+7)h
38h
0000h
(P+8)h
39h
0000h
(P+9)h
3Ah
0000h
0001h
Supported functions after Suspend:
Program allowed after Erase Suspend (1=yes)
(refer to Commands for other allowed functions)
Bit 7-1 reserved for future use
(P+A)h
3Bh
0000h
0001h
Block Status Register
bit 0 Block Protect Bit Status active (1=yes)
bits 1-15 are reserved
(P+B)h
3Ch
0000h
(P+C)h
3Dh
0000h
0033h
VDD OPTIMUM Program/Erase voltage conditions
(P+D)h
3Eh
0000h
0033h
VPP OPTIMUM Program/Erase voltage conditions
(P+E)h
3Fh
0000h
0002h
OTP protection: 00 NA, 01 128-bit, 02 OTP area
(P+F)h
40h
0000h
0004h
Page Read: 2n Bytes (n = bits 0-7)
(P+10)h
41h
0000h
0004h
Synchronous mode configuration fields
(P+11)h
42h
0000h
n where 2n+1 is the number of Words/Double-Words
for the burst Length (= 2)
(P+12)h
43h
0000h
0001h
n where 2n+1 is the number of Words/Double-Words
for the burst Length (= 4)
(P+13)h
44h
0000h
0002h
n where 2n+1 is the number of Words/Double-Words
for the burst Length (= 8) (x16 mode only)
(P+14)h
45h
0000h
0007h
burst continuous
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LW128AN | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LW128B | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LW128B150N1E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LW128B150N1F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LW128B150N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
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