參數(shù)資料
型號: M58LW064C
廠商: 意法半導(dǎo)體
英文描述: 64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory
中文描述: 64兆位(4Mb的x16插槽,統(tǒng)一座,突發(fā))3V電源快閃記憶體
文件頁數(shù): 27/53頁
文件大?。?/td> 319K
代理商: M58LW064C
27/53
M58LW064A, M58LW064B
Figure 8. AC Testing Load Circuit
AI03229
1.3V
OUT
CL= 30pF
CLincludes JIG capacitance
3.3k
1N914
DEVICE
UNDER
TEST
Figure 7. AC Testing Input Output Waveform
Note: V
DD
= V
DDQ
.
AI00610
VDDQ
0V
VDDQ/2
Table 20. AC Measurement Conditions
Clock Rise and Fall Times
3ns
Input Rise and Fall Times
4ns
Input Pulses Voltages
0V to V
DDQ
Input and Output Timing Ref. Voltages
V
DDQ
/2
Table 21. Capacitance
(T
A
= 25
°
C, f = 1 MHz)
Symbol
Parameter
Test Condition
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
8
pF
C
OUT
Output Capacitance
V
OUT
= 0V
8
12
pF
相關(guān)PDF資料
PDF描述
M58LW064C110N1T 64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory
M58LW064BZA 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
M58LW064A150NH6T 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
M58LW064B150NH6T 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
M58LW064BNH 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
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