參數(shù)資料
型號： M58LW064C
廠商： 意法半導(dǎo)體
英文描述： 64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory
中文描述： 64兆位（4Mb的x16插槽，統(tǒng)一座，突發(fā)）3V電源快閃記憶體
文件頁數(shù)： 20/53頁
文件大?。?/td> 319K
代理商： M58LW064C
M58LW064A, M58LW064B
20/53
Table 13. Status Register Definition
Note: 1. DQ0-DQ6 are High Impedance when DQ7 is indicating that the part is busy. Status Register P/ECS bit7 indicates the P/E.C.status,
check during Program or Erase, and on completion before checking bit4 or bit5 for Program or Erase Success.
2. DQ6 indicates the Erase Suspend Status. On an Erase Suspend instruction P/ECS and ESS bits are set to’1’. ESS bit remains ’1’
until an EraseResume instruction is given.
3. Erase Status, ES bit5 is set to ’1’ if the P/E.C.has applied the maximum number of erase pulses to the block without achieving an
erase verify.
4. Program Status, PS bit4 is set to’1’ if the P/E.C. has failed to program a Word or Double-Word.
5. DQ2 indicates the Program Suspend Status. On a Program Suspend instruction P/ECS and PSS bits are set to ’1’.PSS bit remains
’1’until an Program Resume instruction is given.
6. DQ1 defines the status of an Erase or Write to Buffer and Program instruction defined in a protected block. RP pin must be held at
V
HH
to temporarily override the block protect feature once it has been enabled.
7. DQ5 andDQ4 simultaneously at ’1’after an Erase or Block Unprotect instruction indicates thatan impropercommand was entered.
Mnemonic
DQ
Function
Status
P/ECS
DQ7
P/E.C. Status
1 = Ready
0 = Busy
(1)
ESS
DQ6
Erase Suspend Status
1 = Block Erase Suspended
0 = Block Erase in Progress/Completed
(2)
ES
DQ5
Erase/Block Unprotect Status
(7)
1 = Error in Block Erase operation or Block
Unprotect
0 = Successful Block Erase operation or Block
Unprotect
(3)
PS
DQ4
Write to Buffer and Program/Block
Protect Status
(7)
1 = Error in Write to Buffer and Program, Block
Protect
(4)
0 = Write to Buffer and Program, Block Protect
Completed successfully
DQ3
Not used
PSS
DQ2
Program Suspend Status
1 = Program Suspended
0 = Program operation in Progress/Completed
(5)
EPPB
DQ1
Erase/Write to Buffer and Program in a
Protected Block
1 = Error in the defined operation
0 = Operation in Progress/Completed
(6)
DQ0
Not used
相關(guān)PDF資料
PDF描述
M58LW064C110N1T 64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory
M58LW064BZA 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
M58LW064A150NH6T 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
M58LW064B150NH6T 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
M58LW064BNH 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58LW064C110N1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory
M58LW064C110N6 功能描述:閃存 8Mx8 or 4Mx16 110ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M58LW064C110N6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory
M58LW064C110ZA1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory
M58LW064C110ZA6 功能描述:閃存 8Mx8 or 4Mx16 110ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*