參數(shù)資料
型號: M58LW064C110ZA1T
廠商: 意法半導(dǎo)體
英文描述: 64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory
中文描述: 64兆位(4Mb的x16插槽,統(tǒng)一座,突發(fā))3V電源快閃記憶體
文件頁數(shù): 48/53頁
文件大小: 319K
代理商: M58LW064C110ZA1T
M58LW064A, M58LW064B
48/53
Table 29. Ordering Information Scheme
Devices are shipped from the factory with the memory content bits erased to ’1’.
For a list of available options (Configuration, Package, etc...) or for further information on any aspect of
this device, please contact the STMicroelectronics Sales Office nearest to you.
Example:
M58LW064A
150 N
1
T
Device Type
M58
Architecture
L = Multi-Bit Cell, Burst Mode, Page Mode
Operating Voltage
W = V
DD
= 2.7V to 3.6V; V
DDQ
= 1.8 to V
DD
Device Function
064A = 64 Mbit (x16), Equal Block, Boot Block
064B = 64 Mbit (x16/x32), Equal Block, Boot Block
Speed
150 = 150 ns
Package
NF = TSOP56: 14 x 20 mm
NH = TSOP86 Type II
T = PQFP80
ZA = LBGA64
Temperature Range
1 = 0 to 70
°
C
6 = –40 to 85
°
C
Option
T = Tape & Reel Packing
相關(guān)PDF資料
PDF描述
M58LW064A150T1T 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
M58LW064B150T1T 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
M58LW064A150T6T 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
M58LW064B150T6T 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
M58LW064A150ZA1T 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
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