參數(shù)資料
型號(hào)： M58LW064C110N6T
廠商： 意法半導(dǎo)體
英文描述： 64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory
中文描述： 64兆位（4Mb的x16插槽，統(tǒng)一座，突發(fā)）3V電源快閃記憶體
文件頁(yè)數(shù)： 26/53頁(yè)
文件大小： 319K
代理商： M58LW064C110N6T
M58LW064A, M58LW064B
26/53
Table 18. Block Status Register (see also, Table 6 and 7 in the datasheet)
Note: 1. BA specifies the block address location, i-e, A22-A17.
2. Not Supported.
Table 19. Extended Query information
Note: 1. Bit7 to bit4 are coded in Hexadecimal and scaled in Volt while bit3 to bit0 are in Binary Code Decimal and scaled in mV.
2. Not supported.
Address
A22-A2
Data (Hex) x32 organization
Selected Block Information
(BA+3)h
(1)
bit0
0
Block Unlocked
1
Block Locked
bit1
0
Last erase operation ended successfully
(2)
1
Last erase operation not ended successfully
(2)
bit7-2
0
Reserved for future features
M58LW064B - x32
M58LW064A - x16
M58LW064B -
x16 organization
Instruction
Address
offset
Address
A22-A2
Data (Hex)
x32 organization
Address
A22-A1
Data
(P)h
31h
50h
”P”
62h, 63h
50h
Query ASCII string - Extended Table
(P+1)h
32h
52h
”R”
64h, 65h
52h
(P+2)h
33h
49h
”Y”
66h, 67h
49h
(P+3)h
34h
31h
68h, 69h
31h
Major version number
(P+4)h
35h
31h
6Ah, 6Bh
31h
Minor version number
(P+5)h
36h
0Eh
6Ch, 6Dh
0Eh
Optional Feature: (1=yes, 0=no)
bit0, Chip Erase Supported (0=no)
bit1, Suspend Erase Supported (1=yes)
bit2, Suspend Program Supported (1=yes)
bit3, Lock/Unlock Supported (1=yes)
bit4, Queue Erase Supported (0=no)
Bit 31-5 reserved for future use
(P+6)h
37h
00h
6Eh, 6Fh
00h
Optional Features
(P+7)h
38h
00h
70h, 71h
00h
(P+8)h
39h
00h
72h, 73h
00h
(P+9)h
3Ah
01h
74h, 75h
00h
Function allowed after Suspend:
Program allowed after Erase Suspend (1=yes)
Bit 7-1 reserved for future use
(P+A)h
3Bh
00h
(2)
76h, 77h
00h
(2)
Block Status Register Mask
(P+C)h
3Ch
33h
78h, 79h
33h
V
CC
OPTIMUM Program/Erase voltage conditions
(P+D)h
3Dh
50h
7Ah, 7Bh
50h
V
PP
OPTIMUM Program/Erase voltage conditions
(P+E)h
3Eh
00h
7Ch, 7Dh
00h
Reserved for future use
(P+F)h
3Fh
00h
7Dh, 7Fh
00h
Reserved for future use
相關(guān)PDF資料
PDF描述
M58LW064D 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
M58LW064D110N1 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
M58LW064D110N1E 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
M58LW064D110ZA1E 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
M58LW064D110ZA1F 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58LW064C110ZA1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory
M58LW064C110ZA6 功能描述:閃存 8Mx8 or 4Mx16 110ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M58LW064C110ZA6T 功能描述:閃存 8Mx8 or 4Mx16 110ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M58LW064D 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
M58LW064D110N1 制造商:Micron Technology Inc 功能描述:
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