參數(shù)資料
型號(hào)： M58LW064C110N6T
廠商： 意法半導(dǎo)體
英文描述： 64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory
中文描述： 64兆位（4Mb的x16插槽，統(tǒng)一座，突發(fā)）3V電源快閃記憶體
文件頁(yè)數(shù)： 16/53頁(yè)
文件大?。?/td> 319K
代理商： M58LW064C110N6T
M58LW064A, M58LW064B
16/53
Table 10. Burst Configuration Register
(1)
Note: 1. The BCR defines both the read mode and the burst configuration.
2. Synchronous burst length is defined as Word or Double-Word, the data bus width depends only on the WORD input.
Asynchronous Page read is two Words or one Double-Word.
3. A burst length of 8 is not available for x32 organisation.
4. At F
K
> 50MHz when X-Latency = 10 or 12, Y-Latency = 2 independent of the value of M9.
At F
K
= 66MHz when X-Lantency = 14 or 16, Y-Latency = 2 indepedent of the value of M9.
5. Latency 7 valid only for continuous burst. Otherwisw Latency = 8.
6. Latency 10 valid only for continuous burst. Otherwisw Latency = 12.
7. Latency 11 valid only for continuous burst. Otherwisw Latency = 12.
8. Latency 14 valid only for continuous burst. Otherwisw Latency = 16.
BCR mode bit
Description
Value
Description
M15
Read Select
0
Synchronous Burst Read
1
Asynchronous Read
M14-M11
X-Latency
(4)
0001
Reserved
0010
7, only for F
K
= 33MHz
(5)
0011
8, only for F
K
= 33MHz
0100
9, only for F
K
= 33MHz
0101
10, only for F
K
= 50MHz
(6)
0110
11, only for F
K
= 50MHz
(7)
1001
12, only for F
K
= 50MHz
1010
13, only for F
K
= 50MHz
1011
14, only for F
K
= 66MHz
(8)
1101
16, only for F
K
= 66MHz
M9
Y-Latency
(4)
0
One Burst Clock cycle
1
Two Burst Clock cycles
M8
Valid Data Ready
0
R valid Low during valid Burst Clock edge
1
R valid Low one data cycle before valid Burst Clock edge
M7
Burst Type
0
Interleaved
1
Sequential
M6
Valid Clock Edge
0
Falling Burst Clock edge
1
Rising Burst Clock edge
M3
Asynchronous
0
Random Read
1
Latch Enable Controlled Read
M2-M0
Burst Length
(2)
100
1 Word or Double-Word
101
2 Words or Double-Words
001
4 Words or Double-Words
010
8 Words or Double-Words
(3)
111
Continuous
相關(guān)PDF資料
PDF描述
M58LW064D 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
M58LW064D110N1 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
M58LW064D110N1E 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
M58LW064D110ZA1E 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
M58LW064D110ZA1F 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58LW064C110ZA1T 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory
M58LW064C110ZA6 功能描述:閃存 8Mx8 or 4Mx16 110ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M58LW064C110ZA6T 功能描述:閃存 8Mx8 or 4Mx16 110ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M58LW064D 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
M58LW064D110N1 制造商:Micron Technology Inc 功能描述:
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