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參數(shù)資料
| 型號(hào)： | M58LW064C110N6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory |
| 中文描述： | 64兆位（4Mb的x16插槽，統(tǒng)一座，突發(fā)）3V電源快閃記憶體 |
| 文件頁(yè)數(shù)： | 2/53頁(yè) |
| 文件大?。?/td> | 319K |
| 代理商： | M58LW064C110N6T |
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M58LW064A, M58LW064B
2/53
The devices support Asynchronous Random and
Latch EnableControlled Read with Page mode as
well as Synchronous Burst Read with a config-
urable burst. They alsosupport pipelined synchro-
nous Burst Read. Writing is Asynchronous or
Asynchronous Latch Enable Controlled.
The configurablesynchronous burst readinterface
allows a high data transfer rate controlled by the
Burst Clock Ksignal. It is capable of bursting fixed
or unlimited lengths of data. The burst type, laten-
cy and length are configurable and can be easily
adapted to a large variety of system clock frequen-
cies and microprocessors. A 16Word or 8 Double-
Word Write Buffer improves effective program-
ming speed by up to 20 times when data is pro-
grammed in full buffer increments. Effective Word
programming takes typically 12
μ
s. The array ma-
trix organisation allows each block to be erased
and reprogrammed without affecting other blocks.
Program and Erase operations can be suspended
in order to perform either Read or Program in any
other block and then resumed. All blocks are pro-
tected against spurious programming and erase
cycles at power-up. Any block can be separately
protected at any time. The block protection bits
can also be deleted, this is executed as one se-
quence for all blockssimultaneously. Block protec-
tion can be temporarily disabled. Each block can
be programmed and erased over 100,000 cycles.
Block erase is performed in typically 1 second.
An internal Command Interface (C.I.) decodes In-
structions to access/modify the memory content.
The Program/Erase Controller (P/E.C.) automati-
cally executes the algorithms taking care of the
timings required by the program and erase opera-
tions. Verification is internally performed and a
Status Register tracks thestatus of the operations.
The Ready/Busy output RB indicates the comple-
tion of operations.
Instructions are written to the memory through the
Command Interface (C.I.) using standard micro-
processor write timings. The device supports the
Common Flash Interface (CFI) command set defi-
nition.
A Reset/Power-down mode is entered when the
RP input is Low. In this modethe power consump-
tion is lower than in the normalstandby mode, the
device is write protected and both the Status and
the Burst Configuration Registers are cleared. A
recovery time is required when the RP input goes
High.
The device is offered in various package versions,
TSOP56 (14 x 20 mm), TSOP86 Type II (11.76 x
22.22 mm) and LBGA54 1mm ball pitch for the
M58LW064A and PQFP80 for the M58LW064B.
Table 1. Signal Names
A1-A22
Address Inputs x16 Organisation
A2-A22
Address inputs x32 Organisation
DQ0-DQ7
Data Input/Output x16 and x32
Organisation Command Input,
Electronic Signature Output, Block
Protection Ststus Output, Status
Register Output
DQ8-DQ15
Data Input/Output x16 and x32
Organisation
DQ16-DQ31
Data Input/Output x32 Organisation
B
Burst Address Advance
E
Chip Enable
G
Output Enable
K
Burst Clock
L
Latch Enable
R
Valid Data Ready (open drain output)
RB
Ready/Busy (open drain output)
RP
Reset/Power-down
V
PP
Program/Erase Enable
W
Write Enable
WORD
Word Organisation (M58LW064B only)
V
DD
Supply Voltage
V
DDQ
Input/Output Supply Voltage
V
SS
Ground
NC
No internal connection
DU
Don’t Use (internally connected)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58LW064D | 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
| M58LW064D110N1 | 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
| M58LW064D110N1E | 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
| M58LW064D110ZA1E | 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
| M58LW064D110ZA1F | 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LW064C110ZA1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory |
| M58LW064C110ZA6 | 功能描述:閃存 8Mx8 or 4Mx16 110ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M58LW064C110ZA6T | 功能描述:閃存 8Mx8 or 4Mx16 110ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M58LW064D | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
| M58LW064D110N1 | 制造商:Micron Technology Inc 功能描述: |
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