參數(shù)資料
型號(hào): M58LW064BNH
廠商: 意法半導(dǎo)體
英文描述: 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
中文描述: 64兆位x16和x16/x32,塊擦除低壓閃存
文件頁(yè)數(shù): 39/53頁(yè)
文件大?。?/td> 319K
代理商: M58LW064BNH
39/53
M58LW064A, M58LW064B
Table 27. Reset, Power-down and Power-up
(T
A
= 0 to 70
°
C, –40 to 85
°
C, V
DD
= 2.7V to 3.6V, V
DD
= 1.8V to V
DD
)
Symbol
Table 28. Program, Erase Times and Program Erase Endurance Cycles
(T
A
= 0 to 70
°
C; V
DD
= 2.7V to 3.6V; V
DDQ
=1.7V to 1.9V)
Parameter
Min
Max
Unit
t
PHEL
Reset/Power-down High to Chip Enable Low
50
μ
s
t
PHQV
Reset/Power-down High to Output Valid
10
μ
s
t
PHWL
Reset/Power-down High to Write Enable Low
50
μ
s
t
PLPH
Reset/Power-down Low to Reset/Power-down High
500
ns
t
PLRH
Reset/Power-down Low to Ready High
22
μ
s
t
PUR
Power-up to Read
10
μ
s
t
PUW
Power-up to Write
10
μ
s
t
VDHEL
Supply Voltages High to Chip Enable low
50
ms
t
VDHPH
Supply Voltages High to Reset/Power-down High
1
μ
s
t
VDHWL
Supply Voltages High to Write Enable Low
50
ms
Parameters
M58LW064A/B
Unit
Min
Max
Typ
Typical after
100k W/E Cycles
Uniform Block (1Mb) Erase
1.5
0.75
0.75
sec
Chip Program
54
54
sec
Write Buffer
192
192
μ
s
Program Suspend Latency Time
10
3
μ
s
Erase Suspend Latency Time
30
10
μ
s
Program/Erase Cycles (per Block)
100,000
cycles
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58LW064BT 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
M58LW064BZA 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
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M58LW064C110N1T 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory
M58LW064C110N6 功能描述:閃存 8Mx8 or 4Mx16 110ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel