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參數(shù)資料
| 型號： | M58LW064BNH |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| 中文描述： | 64兆位x16和x16/x32，塊擦除低壓閃存 |
| 文件頁數(shù)： | 25/53頁 |
| 文件大?。?/td> | 319K |
| 代理商： | M58LW064BNH |
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M58LW064A, M58LW064B
Table 16. CFI - Device Voltage and Timing Specification
Note: 1. Bits are coded in Binary Code Decimal, bit7 to bit4 are scaled in Volt and bit3 to bit0 in mV.
2. Bit7 to bit4 are coded in Hexadecimal and scaled in Volt while bit3 to bit0 are in Binary Code Decimal and scaled in 100mV.
3. Not supported.
4. For M58LW064B, A1 = Don’t Care.
Table 17. Device Geometry Definition
Note: 1. For M58LW064B, A1 = Don’t Care.
Address
(4)
A22-A1 (M58LW064A)
A22-A2 (M58LW064B)
Data
Instruction
1Bh
27h
(1)
V
CC
Min, 2.7V
1Ch
36h
(1)
V
CC
max, 3.6V
1Dh
00h
(2)
V
PP
min – Not Available
1Eh
00h
(2)
V
PP
max – Not Available
1Fh
00h
(3)
2
N
ms Word, DWordprog. typical time-out
20h
x07h
2
N
ms, typical time out formax buffer write
21h
0Ah
2
N
ms, Erase Block typical time-out
22h
00h
(3)
2
N
ms, chip erase time-out typ. – Not Available
23h
00h
(3)
2
N
times typ. for Word Dword time-out max – Not Available
24h
04h
2
N
times typ. for buffer write time-out max
25h
04h
2
N
x typ. individual block erase time-out maximum
26h
00h
(3)
2
N
times typ. for chip erase max time-out – Not Available
Address
(1)
A22-A1 (M58LW064A)
A22-A2 (M58LW064B)
Data
Instruction
27h
17h
2
N
nb. of bytes device Size
28h
01h.
Device Interface Sync./Async.
29h
00h
Organisation Sync./Async.
2Ah
05h
Page size in bytes, 2
N
2Bh
00h
2Ch
01h
Bit7-0 = nb of Erase Block region
2Dh
3Fh
Number (N-1) of Erase Blocks of identical size; N=64
2Eh
00h
2Fh
00h
x times 256 bytes per Erase block (128K bytes)
30h
02h
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58LW064BNF | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064B150NH1T | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064A150NH1T | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064C110ZA6T | 64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory |
| M58LW064C110N6T | 64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LW064BT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064BZA | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064C | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory |
| M58LW064C110N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory |
| M58LW064C110N6 | 功能描述:閃存 8Mx8 or 4Mx16 110ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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