參數(shù)資料
型號: M58LW064B
廠商: 意法半導(dǎo)體
英文描述: 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
中文描述: 64兆位x16和x16/x32,塊擦除低壓閃存
文件頁數(shù): 39/53頁
文件大?。?/td> 319K
代理商: M58LW064B
39/53
M58LW064A, M58LW064B
Table 27. Reset, Power-down and Power-up
(T
A
= 0 to 70
°
C, –40 to 85
°
C, V
DD
= 2.7V to 3.6V, V
DD
= 1.8V to V
DD
)
Symbol
Table 28. Program, Erase Times and Program Erase Endurance Cycles
(T
A
= 0 to 70
°
C; V
DD
= 2.7V to 3.6V; V
DDQ
=1.7V to 1.9V)
Parameter
Min
Max
Unit
t
PHEL
Reset/Power-down High to Chip Enable Low
50
μ
s
t
PHQV
Reset/Power-down High to Output Valid
10
μ
s
t
PHWL
Reset/Power-down High to Write Enable Low
50
μ
s
t
PLPH
Reset/Power-down Low to Reset/Power-down High
500
ns
t
PLRH
Reset/Power-down Low to Ready High
22
μ
s
t
PUR
Power-up to Read
10
μ
s
t
PUW
Power-up to Write
10
μ
s
t
VDHEL
Supply Voltages High to Chip Enable low
50
ms
t
VDHPH
Supply Voltages High to Reset/Power-down High
1
μ
s
t
VDHWL
Supply Voltages High to Write Enable Low
50
ms
Parameters
M58LW064A/B
Unit
Min
Max
Typ
Typical after
100k W/E Cycles
Uniform Block (1Mb) Erase
1.5
0.75
0.75
sec
Chip Program
54
54
sec
Write Buffer
192
192
μ
s
Program Suspend Latency Time
10
3
μ
s
Erase Suspend Latency Time
30
10
μ
s
Program/Erase Cycles (per Block)
100,000
cycles
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