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參數(shù)資料
| 型號： | M58LW064B |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| 中文描述： | 64兆位x16和x16/x32，塊擦除低壓閃存 |
| 文件頁數(shù)： | 1/53頁 |
| 文件大?。?/td> | 319K |
| 代理商： | M58LW064B |
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PRODUCT PREVIEW
May 2000
This is preliminary information on a new product now in development. Details are subject to change without notice.
M58LW064A
M58LW064B
64 Mbit (x16 and x16/x32, Block Erase)
Low Voltage Flash Memories
I
M58LW064A x16 organisation,
I
M58LW064B x16/x32 selectable
I
MULTI-BIT CELLfor HIGH DENSITY and LOW
COST
I
SUPPLY VOLTAGE
– V
DD
= 2.7V to 3.6V Supply Voltage
– V
DDQ
= 2.7V to 3.6V or 1.8V to 2.5V
Input/Output Supply Voltage
I
PIPELINED SYNCHRONOUS BURST
INTERFACE
I
SYNCHRONOUS/ASYNCHRONOUS READ
– Synchronous Burst read
– Asynchronous Random and Latch Enabled
Controlled Read, with Page Read
I
ACCESS TIME
– Synchronous Burst Read up to 66MHz
– Asynchronous Page Mode Read 150/25ns,
Random Read 150ns
I
PROGRAMMING TIME
– 16 Word or 8 Double-Word Write Buffer
– 12us Word effective programming time
I
MEMORY BLOCKS
– 64 Equal blocks of 1 Mbit
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code M58LW064A: 17h
– Device Code M58LW064B: 14h
DESCRIPTION
The M58LW064 is a non-volatile Flash memory
that may be erased electrically at the block level
and programmed in-system on a 16 Word or 8
Double-Word basis using a 2.7V to 3.6V supply for
the circuit and a supply down to 1.8V for the Input
and Output buffers. The M58LW064A is organised
as 4M by 16 bit. The M58LW064B has 4M by 16
bit or 2M by 32 bit organisation selectable by the
Word Organisation WORD input. Both devices are
internally configured as 64 blocks of 1 Mbit each.
FBGA
86
1
TSOP56 (NF)
LBGA54 (ZA)
PQFP80 (T)
TSOP86 II (NH)
Figure 1. Logic Diagram
Note: 1. Only on M58LW064B.
AI03223
22
A1-A22
W
DQ0-DQ31
VDD
M58LW064A
M58LW064B
E
VSS
32
G
RP
L
VDDQ
B
K
RB
R
VPP
WORD
(1)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58LW064B150NF1T | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064B150ZA6T | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064BT | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064C | 64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory |
| M58LW064C110N1T | 64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LW064B150NF1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064B150NF6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064B150NH1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064B150NH6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064B150T1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
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