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參數(shù)資料
| 型號(hào)： | M58LW064B |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| 中文描述： | 64兆位x16和x16/x32，塊擦除低壓閃存 |
| 文件頁(yè)數(shù)： | 36/53頁(yè) |
| 文件大?。?/td> | 319K |
| 代理商： | M58LW064B |
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M58LW064A, M58LW064B
36/53
Table 26. Asynchronous Write and Latch Enable Controlled Write
(T
A
= 0 to 70
°
C, –40 to 85
°
C, V
DD
= 2.7V to 3.6V, V
DD
= 1.8V to V
DD
)
Symbol
Parameter
Test Condition
Min
Max
Unit
t
AVLH
Address Validto Latch Enable High
10
ns
t
AVWH
Address Validto Write Enable High
E = V
IL
50
ns
t
DVWH
Data Input Valid to Write Enable High
E = V
IL
50
ns
t
ELWL
Chip Enable Low to Write Enable Low
0
ns
t
LHAX
Latch Enable High to Address Transition
3
ns
t
LLLH
Latch Enable low to Latch Enable High
10
ns
t
LLWH
latch Enable Low to Write Enable High
50
ns
t
QVRH
Output Valid to Reset/Power Down VDD
0
ns
t
QVVPL
Output Valid to Program/Erase Enable Low
0
ns
t
RHHWH
Reset/Power Down VHH to Write Enable High
0
ns
t
VPHWH
Program/Erase Enable High to Write Enable High
0
ns
t
WHAX
Write Enable High to Address Transition
E = V
IL
10
ns
t
WHBL
Write Enable High to Read/Busy low
90
ns
t
WHDX
Write Enable High to Input Transition
E = V
IL
10
ns
t
WHEH
Write Enable High to Chip Enable High
0
ns
t
WHGL
Write Enable High to Output Enable Low
35
ns
t
WHWL
Write Enable High to Write Enable Low
30
ns
t
WLWH
Write Enable Low to Write Enable High
E = V
IL
70
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58LW064B150NF1T | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064B150ZA6T | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064BT | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064C | 64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory |
| M58LW064C110N1T | 64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LW064B150NF1T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064B150NF6T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064B150NH1T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064B150NH6T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064B150T1T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
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