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參數(shù)資料
| 型號(hào)： | M58LW064A |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| 中文描述： | 64兆位x16和x16/x32，塊擦除低壓閃存 |
| 文件頁(yè)數(shù)： | 9/53頁(yè) |
| 文件大?。?/td> | 319K |
| 代理商： | M58LW064A |
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M58LW064A, M58LW064B
Table 4. Synchronous Burst Read Operations
(1)
Note: 1. X = Don’t Care, V
IL
or V
IH
.
2.
need to check with designers for various X and clock _/ definitions
Table 5. Asynchronous Read Electronic Signature Operation
Note: 1. For M58LW064B, A1 = Dont’Care
Table 6. M58LW064A CFI Block Protection Status Query Operation
(1)
Note: 1. X = Dont’Care, V
IL
or V
IH
.
Table 7. M58LW064B CFI Block Protection Status Query Operation
(1)
Note: 1. X = Dont’Care, V
IL
or V
IH
.
Operation
E
G
RP
K
L
B
A1-A22
DQ0-DQ31
Address Latch
V
IL
V
IH
V
IH
_/
V
IL
V
IH
Addess Input
Burst Read
V
IL
V
IL
V
IH
_/
V
IH
V
IH
Data Output
Burst Read Suspend
V
IL
V
IH
V
IH
X
V
IH
V
IH
High Z
Burst Read Interrupt (E)
V
IH
X
V
IH
X
V
IH
V
IH
High Z
Burst Read Interrupt (RP)
X
X
V
IL
X
X
X
High Z
Burst Read Resume
V
IL
V
IL
V
IH
_/
V
IH
V
IL
Data Output
Burst Address Advance
V
IL
V
IH
V
IH
_/
V
IH
V
IL
High Z
No Data Output Burst Address
Advance with valid Data Output
V
IL
V
IL
V
IH
_/
V
IH
V
IL
Data Output
Code
Device
E
G
W
A22-A1
A22-A2
DQ7-DQ0
Manufacturer
All
V
IL
V
IL
V
IH
00000h
00000h
20h
Device
M58LW064A
V
IL
V
IL
V
IH
00001h
–
17h
M58LW064B
(1)
V
IL
V
IL
V
IH
–
00001h
14h
Block Status
E
G
W
A1
A2
A3-A16
A17-A22
DQ7-DQ0
Protected
V
IL
V
IL
V
IH
V
IH
V
IH
X
Block Address
01h
Unprotected
V
IL
V
IL
V
IH
V
IH
V
IH
X
Block Address
00h
Block Status
E
G
W
A1
A2
A3
A4-A16
A17-A22
DQ7-DQ0
Protected
V
IL
V
IL
V
IH
X
V
IH
V
IH
X
Block Address
01h
Unprotected
V
IL
V
IL
V
IH
X
V
IH
V
IH
X
Block Address
00h
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58LW064A150NF1T | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064A150ZA6T | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064ANF | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064ANH | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064AT | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LW064A150N1 | 功能描述:閃存 8Mx8 or 4Mx16 150ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M58LW064A150NF1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064A150NF6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064A150NH1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064A150NH6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
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