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參數(shù)資料
| 型號： | M58LW064A |
| 廠商： | 意法半導體 |
| 英文描述： | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| 中文描述： | 64兆位x16和x16/x32，塊擦除低壓閃存 |
| 文件頁數(shù)： | 32/53頁 |
| 文件大小： | 319K |
| 代理商： | M58LW064A |
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M58LW064A, M58LW064B
32/53
Table 25. Synchronous Burst Read
(T
A
= 0 to 70
°
C, –40 to 85
°
C, V
DD
= 2.7V to 3.6V, V
DD
= 1.8V to V
DD
)
Note: 1. Data output should be read on the valid clock edge.
2. For paramters not listed see Asynchronous Read.
Symbol
(2)
Parameter
Test Condition
Min
Max
Unit
t
AVLL
Address Valid to Latch Enable Low
E = V
IL
10
ns
t
BHKH
Burst Address Advance High toValid Clock Edge
E = V
IL
, G = V
IL
, L = V
IH
10
ns
t
BLKH
Burst Address Advance Low to Valid Clock Edge
E = V
IL
, G = V
IL
, L = V
IH
10
ns
t
ELLL
Chip Enable Low toLatch Enable low
0
ns
t
GLKH
Output Enable Low to Valid Clock Edge
E = V
IL
, L = V
IH
20
ns
t
KHAX
Valid Clock Edge to Address Transition
E = V
IL
0
ns
t
KHLL
Valid Clock Edge to Latch Enable Low
E = V
IL
0
ns
t
KHLX
Valid Clock Edge to Latch Enable Transition
E = V
IL
0
ns
t
KHQX
Valid Clock Edge to Output Transition
E = V
IL
, G = V
IL
, L = V
IH
6
ns
t
LLKH
Latch Enable Low to Valid Clock Edge
E = V
IL
10
ns
t
QVKH(1)
Output Valid to Valid Clock Edge
E = V
IL
, G = V
IL
, L = V
IH
10
ns
t
RLKH
Valid Data Ready Low to Valid Clock Edge
E = V
IL
, G = V
IL
, L = V
IH
10
ns
Figure 12. Synchronous Burst Read (9.1.1.1 example)
X-Latency = 0 (M14-M11 = 0100), Y-Latency = 1 (M9 = 0), Burst Length = 4 (M2-M0 = 001),
Burst Type = Sequential (M7 = 1), Valid Clock Edge = Rising (M6 = 1)
AI03698
K
(1)
For set up signals and timings see Synchronous Burst Read 8.1.1.1
14
13
12
11
10
9
DQ0-DQx
tQVKH
tKHQX
Q0
Q1
Q2
Q3
Q0
Q1
SETUP
(1)
Burst
Read
Q0 to Q3
Burst Read Wraps if
Device
remains Selected (E = VIL)
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| M58LW064A150NF1T | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LW064A150N1 | 功能描述:閃存 8Mx8 or 4Mx16 150ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M58LW064A150NF1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064A150NF6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064A150NH1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064A150NH6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
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