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參數(shù)資料
| 型號： | M58LW064A |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| 中文描述： | 64兆位x16和x16/x32，塊擦除低壓閃存 |
| 文件頁數(shù)： | 18/53頁 |
| 文件大?。?/td> | 319K |
| 代理商： | M58LW064A |
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M58LW064A, M58LW064B
18/53
Read Electronic Signature Instruction (RSIG).
An Electronic Signature can be read from the
memory allowing programming equipment or ap-
plications to automatically match their interface to
the characteristics of the device.
The Electronic Signature instruction consists of a
first write cycle giving the command 90h, followed
by a subsequent read which will output the Manu-
facturer Code, the Device Code or the Block Pro-
tection Status. The Manufacturer Code is output
when all the address inputs are at VIL. The Device
Code is output when A1 (for the M58LW064A) or
A2 (for the M58LW064B) is at V
IH
, with all other
address inputs at V
IL
. The code is output on DQ0-
DQ7 with DQ8-DQ31 at V
IL
.
The RSIG Instruction also allows access to the
Block Protection Status for the selected block ad-
dress defined by A17-A22. After the Read Elec-
tronic Signature (RSIG) command, A1-A2 (for the
M58LW064A) or A2-A3 (for the M58LW064B) are
set to V
IH
, while A17-A22 define the address of the
block to be queried. A read operation outputs 01h
if the block is protected and 00h if the block is not
protected.
Read Query Instruction (RCFI).
The Read Que-
ry Instruction is initiated with one writecycle giving
the command 98h at any address. Subsequent
read operations, depending on the address speci-
fied, will output the Block Status information, the
Common Flash Interface ID string, the System In-
terface information, the Device Geometry Config-
uration or STMicroelectronics Specific Query
information. The address mappingfor the informa-
tion is shown in Table 14.
Read Status Register Instruction (RSR).
The
Read Status Register Instruction consists of one
write cycle giving the command 70h. Subsequent
read operations, independent of the address, out-
put the Status Register information that indicatesif
a Block Erase, Write to Buffer and Program, Block
Protect or Block Unprotect operation has been
completed successfully. See Table 12. Once initi-
ated the RSR Instruction is active until another
command is given to the Command Interface.
For Asynchronous Read, the Status Register in-
formation is present on the output data bus when
both Chip Enable Eand Output Enable Gare Low.
In Synchronous BurstRead the Status Register in-
formation is output on the data bus DQ1-DQ7
when Latch Enable L goes High or on a valid Burst
Clock K edge (M6 in the Burst Configuration Reg-
ister specifies therising or fallingvalid clock edge)
when Latch Enable L is low. An interactive update
of the status register information is possible by
toggling Output Enable G, or when the device is
INSTRUCTIONS AND COMMANDS
The Command Interface latches commands writ-
ten to the memory. Instructions are made up of
one or more commands to perform:
– Read Array (RD),
– Read Electronic Signature or Read Block Pro-
tection (RSIG),
– Read Status Register (RSR),
– Read Query (RCFI),
– Clear Status Register (CLRS),
– Block Erase (EE),
– Write to Buffer and Program (WBPR),
– Erase/Program Suspend (PES),
– Erase/Program Resume (PER),
– Set Burst Configuration Register (SBCR),
– Block Protect (BP), and
– Block Unprotect (BU).
Instructions (see Table 12)are composed of a first
write sequence followed by either a second write
sequence needed toconfirm anErase orProgram
instruction or by a read operation in order to read
data from the array, the Electronic Signature, the
Block Protection information, the CFIor the Status
Register information. The instructions for Write to
Buffer and Program and Block Erase operations
consist of two commands written into the memory
Command Interface (C.I.) that start the automatic
P/E.C. operation. Erasure of a memory block may
be suspended,in order to read data fromor to pro-
gram data in an other block, and then be resumed.
Write to Buffer and Program operation may be
suspended, in order to read data from another
block, and then be resumed.
At power-up the Command Interface is reset to
Read Array. The appropriate Instruction must be
given to access Read Query (RCFI), Read Elec-
tronic Signature or Block Protection Status (RSIG)
or Read Status Register (RSR). Reading of the
memory array is disabled during a Block Protect/
Unprotect (BP, BU), a Block Erase (EE) or a Write
to Buffer and Program (WBPR) Instruction. A
Erase/Program Suspend Instruction (PES) must
be given to read under these conditions.
Read Array Instruction (RD).
The Read Array
Instruction consists of one write cycle giving the
command FFh. Subsequent read operations will
read the array content addressed and output the
corresponding data. The Read Array Instruction
remains active until another one is written into the
Command Interface. At Power-up or at the exit of
the Reset/Power-down mode, the device is by de-
fault initialised to Read Array.
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| M58LW064A150ZA6T | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064ANF | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LW064A150N1 | 功能描述:閃存 8Mx8 or 4Mx16 150ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M58LW064A150NF1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064A150NF6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064A150NH1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064A150NH6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
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