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參數(shù)資料
| 型號(hào)： | M58LW064A150NH1T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| 中文描述： | 64兆位x16和x16/x32，塊擦除低壓閃存 |
| 文件頁(yè)數(shù)： | 8/53頁(yè) |
| 文件大?。?/td> | 319K |
| 代理商： | M58LW064A150NH1T |
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M58LW064A, M58LW064B
8/53
BUS OPERATIONS
The following operations can be performed using
the appropriate bus configuration:
Asynchronous
– Read Array
– Read Electronic Signature
– Read Block Protection
– Read Status Register
– Read Query
– Write
– Output Disable
– Standby
– Reset/Power-down
Synchronous
– Address Latch
– Burst Read
– Burst Read Suspend
– Burst Read Interrupt
– Burst Read Resume
– Burst Address Advance
See Tables 3, 4, 5, 6 and 7.
COMMAND INTERFACE
Instructions, made up of Commands written in Cy-
cles, can be given tothe Program/Erase Controller
(P/E.C.) by writing to the Command Interface
(C.I.). At power-up or on exit from power down or
if V
DD
is lower than V
LKO
, the Command Interface
is resetto Read Array. Any incorrect commandwill
reset thedevice to Read Array. Anyimproper com-
mand sequence will cause the Status Register to
report the error condition and the device will de-
fault to Read Status Register.
The internal Program/Erase Controller (P/E.C.)
automatically handles all timing and verification of
the Program and Erase operations. The Status
Register information P/ECS on DQ7 can be read
at any time, during programming or erase, to mon-
itor the progress of the operation.
Table 3. Asynchronous Bus Operations
(1)
Note: 1. X = Don’t Care V
IL
or V
IH
. High = V
IH
or V
HH
.
2. = need to check with designers - X or V
IL
Operation
E
G
W
RP
L
DQ0-DQ31
Read Array
V
IL
V
IL
V
IH
High
X
Data Output
Read Electronic Signature or
Block Protection Status
V
IL
V
IL
V
IH
High
X
Manufacturer or Device Code
Output Block Protection Status
Read Status
P/E.C. Active
V
IL
V
IL
V
IH
High
X
Status Register Output
Read Query
V
IL
V
IL
V
IH
High
X
CFI Query Output
Write
V
IL
V
IH
V
IL
High
V
IL
Data Input
Output Disable
V
IL
V
IH
V
IH
High
X
High Z
Standby
V
IH
X
X
High
X
High Z
Reset/Power-down
X
X
X
V
IL
X
High Z
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PDF描述 |
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| M58LW064C110ZA6T | 64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory |
| M58LW064C110N6T | 64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory |
| M58LW064D | 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
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| M58LW064D110N1E | 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LW064A150NH6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064A150T1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064A150T6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064A150ZA1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064A150ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
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