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參數(shù)資料
| 型號： | M58LW064A150NH1T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| 中文描述： | 64兆位x16和x16/x32，塊擦除低壓閃存 |
| 文件頁數(shù)： | 19/53頁 |
| 文件大?。?/td> | 319K |
| 代理商： | M58LW064A150NH1T |
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19/53
M58LW064A, M58LW064B
Table 12. Instructions
Mne-
monic
Instruction
Cycles
1st Cycle
2nd Cycle
Comments
Op.
Address
Data
Op.
Address
Data
RD
Read Array
1+
Write
X
FFh
Read Array until a new
write cycle is initiated
RSIG
Read
Manufacturer
Code
≥
2
Write
X
90h
Read
000000h
20h
Read Manufacturer Code
RSIG
Read Device
Code or Block
Protection
Status
≥
2
Write
X
90h
Read
IAh
IDh
Read Device ID Code
RSR
Read Status
Register
2
Write
X
70h
Read
X
SRDh
SRD = Status Register
Data
RCFI Read Query
≥
2
Write
X
98h
Read
QAh
QDh
QA = Query Address
QD = Query Data
CLRS
Clear Status
Register
1
Write
X
50h
EE
Block
Erase
2
Write
X
20h
Write
BAh
D0h
BA = Block Address to
erase
WBPR
Write
to Buffer and
Program
≥
2
Write
BAh
E8h
Write
BAh
N
BA = Block Address
N = Word/Double-Word
Count Argument
PES
Erase/
Program
Suspend
1
Write
X
B0h
PER
Erase/
Program
Resume
1
Write
X
D0h
Confirm command for
Write to Buffer and
Program instruction
SBCR
Set Burst
Configuration
Register
2
Write
BCRh
60h
Write
BCRh
03h
BCR =Burst Configuration
Register
BP
Block Protect
2
Write
BAh
60h
Write
BAh
01h
Keep the Block Protect bit
active of the selected
block
BA = Block Address
BU
Block
Unprotect
2
Write
X
60h
Write
X
D0h
Clear all the Block protect
bits simultaneously
dis-activated by Chip Enable E High and then re-
activated by Chip Enable E and Output Enable G
Low, during an Erase or Program operation. The
content of Status Register may also be read at the
completion of an Erase/Program and/or Suspend
operation.During a Block Erase, Write to Buffer
and Program, Block Protect or Block Unprotect In-
struction, DQ7 indicatesthe P/E.C. status. Itis val-
id until the operation is completed or suspended,
DQ0-DQ7 output the Status Register content and
DQ8-DQ31 are Low.
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PDF描述 |
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| M58LW064C110ZA6T | 64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory |
| M58LW064C110N6T | 64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory |
| M58LW064D | 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
| M58LW064D110N1 | 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
| M58LW064D110N1E | 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LW064A150NH6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064A150T1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064A150T6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064A150ZA1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064A150ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
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