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參數(shù)資料
| 型號： | M58LW032C90ZA1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| 中文描述： | 32兆位的2Mb x16插槽，統(tǒng)一座，突發(fā)3V電源快閃記憶體 |
| 文件頁數(shù)： | 60/61頁 |
| 文件大?。?/td> | 845K |
| 代理商： | M58LW032C90ZA1 |
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M58LW032C
60/61
REVISION HISTORY
Table 32. Document Revision History
Date
Version
Revision Details
11-Mar-2002
-01
First Issue (Data Brief)
10-Jul-2002
-02
Document expanded to full Product Preview
06-Aug-2002
2.1
Revision numbering modified: a minor revision will be indicated by incrementing the
digit after the dot, and a major revision, by incrementing the digit before the dot
(revision version 02 equals 2.0).
Word Effective Programming Time modified. Program Write Buffer and Block Erase
Time parameters modified in Table 9. Speed Class 90ns added. V
DD
, V
DDQ
, V
SS
and
V
SSQ
signal descriptions modified.
02-Sep-2002
2.2
Figure 12, Asynchronous Latch Controlled Bus Read AC Waveforms
,
modified.
16-Dec-2002
2.3
REVISION HISTORY moved to after the appendices. Table 9, Program, Erase Times
and Program Erase Endurance Cycles table modified. All DU connections changed to
NC in Table 4, TBGA64 Connections (Top view through package). V
IL
max and V
IH
min modified in Table 14, DC Characteristics. Block Protect setup command address
modified in Table 5, Commands. Data and Descriptions clarified in CFI Table 31,
Extended Query information.
29-Apr-2003
3.0
Document promoted to full datasheet. Summary Description clarified, Bus Operations
clarified, Smart Protection added, Read Modes section added, Status Register and
Configuration Register bit nomenclature modified, V
PEN
Invalid Error clarified in
Flowcharts. Lead-free packing options added to Ordering Information Scheme.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58LW032C90ZA1T | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032C90ZA1F | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032C90ZA1E | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032C90N6T | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032C90N6F | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LW032C90ZA1E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032C90ZA1F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032C90ZA1T | 功能描述:閃存 4Mx8 or 2Mx16 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M58LW032C90ZA6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032C90ZA6E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
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