參數(shù)資料
型號(hào): M58LW032C90ZA1
廠商: 意法半導(dǎo)體
英文描述: 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
中文描述: 32兆位的2Mb x16插槽,統(tǒng)一座,突發(fā)3V電源快閃記憶體
文件頁數(shù): 25/61頁
文件大?。?/td> 845K
代理商: M58LW032C90ZA1
25/61
M58LW032C
Figure 8. Protection Register Memory Map
Table 9. Program, Erase Times and Program Erase Endurance Cycles
Note: 1. Typical values measured at room temperature and nominal voltages.
2. Sampled, but not 100% tested.
3.
Effective byte programming time 6μs, effective word programming time 12μs.
4. Maximum value measured at worst case conditions for both temperature and V
DD
after 100,000 program/erase cycles.
5. Maximum value measured at worst case conditions for both temperature and V
DD
.
Parameters
M58LW032C
Unit
Min
Typ
(1,2)
Max
(2)
Block (1Mb) Erase
1.2
4.8
(4)
s
Chip Program (Write to Buffer)
24
72
(4)
s
Chip Erase Time
37
110
(4)
s
Program Write Buffer
192
(3)
576
(4)
μs
Word/Byte Program Time
(Word/Byte Program command)
16
48
(4)
μs
Program Suspend Latency Time
1
20
(5)
μs
Erase Suspend Latency Time
1
25
(5)
μs
Block Protect Time
18
30
(5)
μs
Blocks Unprotect Time
0.75
1.2
(5)
s
Program/Erase Cycles (per block)
100,000
cycles
Data Retention
20
years
AI05501
User Programmable
Unique device number
Protection Register Lock
1
0
88h
85h
84h
81h
80h
WORD
ADDRESS
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