參數(shù)資料
型號(hào)： M52D128168A
廠商： Elite Semiconductor Memory Technology Inc.
英文描述： 2M x 16 Bit x 4 Banks Synchronous DRAM
中文描述： 200萬(wàn)× 16位× 4個(gè)銀行同步DRAM
文件頁(yè)數(shù)： 31/47頁(yè)
文件大小： 1209K
代理商： M52D128168A
ES MT
Note :
1. All input expect CKE & DQM can be don’t care when
CS
is high at the CLK high going edge.
2. Bank active @ read/write are controlled by BA0~BA1.
Preliminary
M52D128168A
Elite Semiconductor Memory Technology Inc.
Revision
:
1.0
Publication Date
:
May. 2007
31/47
BA1
BA0
Active & Read/Write
0
0
Bank A
0
1
Bank B
1
0
Bank C
1
1
Bank D
3. Enable and disable auto precharge function are controlled by A10/AP in read/write command
A10/AP
BA1
BA0
Operating
0
0
Disable auto precharge, leave A bank active at end of burst.
0
1
Disable auto precharge, leave B bank active at end of burst.
1
0
Disable auto precharge, leave C bank active at end of burst.
0
1
1
Disable auto precharge, leave D bank active at end of burst.
0
0
Enable auto precharge , precharge bank A at end of burst.
0
1
Enable auto precharge , precharge bank B at end of burst.
1
0
Enable auto precharge , precharge bank C at end of burst.
1
1
1
Enable auto precharge , precharge bank D at end of burst.
4. A10/AP and BA0~BA1 control bank precharge when precharge is asserted.
A10/AP
BA1
BA0
Precharge
0
0
0
Bank A
0
0
1
Bank B
0
1
0
Bank C
0
1
1
Bank D
1
X
X
All Banks
相關(guān)PDF資料
PDF描述
M52D128168A-10BG 2M x 16 Bit x 4 Banks Synchronous DRAM
M52D128168A-10TG 2M x 16 Bit x 4 Banks Synchronous DRAM
M52D128168A-7.5BG 2M x 16 Bit x 4 Banks Synchronous DRAM
M52D128168A-7.5TG 2M x 16 Bit x 4 Banks Synchronous DRAM
M52D16161A 512K x 16Bit x 2Banks Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M52D128168A_09 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Mobile Synchronous DRAM
M52D128168A_1 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM
M52D128168A-10BG 制造商:ELITE SEMICONDUCTOR 功能描述:SDRAM 128MB 1.8V 100MHZ FBGA54
M52D128168A-10BIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM
M52D128168A-10TG 制造商:ELITE SEMICONDUCTOR 功能描述:SDRAM 128MB 1.8V 100MHZ TSOPII54
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