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參數(shù)資料
| 型號： | M52D128168A-7.5BG |
| 廠商： | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 2M x 16 Bit x 4 Banks Synchronous DRAM |
| 中文描述： | 8M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 |
| 封裝： | 8 X 8 MM, LEAD FREE, FBGA-54 |
| 文件頁數(shù)： | 17/47頁 |
| 文件大?。?/td> | 1209K |
| 代理商： | M52D128168A-7.5BG |
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ES MT
CBR (auto) refresh command
(CS ,RAS ,CAS = Low,
WE
, CKE = High)
This command is a request to begin the CBR refresh operation. The refresh address is
generated internally.
Before executing CBR refresh, all banks must be precharged.
After this cycle, all banks will be in the idle (precharged) state and ready for a row
activate command.
During t
RC
period (from refresh command to refresh or activate command), the DRAM
cannot accept any other command.
Self refresh entry command
(CS ,RAS ,CAS , CKE = Low ,
WE
= High)
After the command execution, self refresh operation continues while CKE remains low.
When CKE goes to high, the DRAM exits the self refresh mode.
During self refresh mode, refresh interval and refresh operation are performed internally,
so there is no need for external control.
Before executing self refresh, all banks must be precharged.
Burst stop command
(CS ,
WE
= Low,RAS ,CAS = High)
This command terminates the current burst operation.
Burst stop is valid at every burst length.
Preliminary
M52D128168A
Elite Semiconductor Memory Technology Inc.
Revision
:
1.0
Publication Date
:
May. 2007
17/47
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PDF描述 |
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| M52D128168A-7.5TG | 2M x 16 Bit x 4 Banks Synchronous DRAM |
| M52D16161A | 512K x 16Bit x 2Banks Synchronous DRAM |
| M52D16161A-10BG | 512K x 16Bit x 2Banks Synchronous DRAM |
| M52D16161A-10TG | 512K x 16Bit x 2Banks Synchronous DRAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M52D128168A-7BG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Mobile Synchronous DRAM |
| M52D128168A-7TG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Mobile Synchronous DRAM |
| M52D16161A | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Mobile Synchronous DRAM |
| M52D16161A_09 | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Mobile Synchronous DRAM |
| M52D16161A_1 | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Mobile Synchronous DRAM |
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