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參數(shù)資料
| 型號： | M50FLW080BN5TP |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory |
| 中文描述： | 8兆位（13 × 64KB之座3 × 16 × 4KB的部門），3V電源固件集線器/低引腳數(shù)快閃記憶體 |
| 文件頁數(shù)： | 28/64頁 |
| 文件大?。?/td> | 341K |
| 代理商： | M50FLW080BN5TP |
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Command interface
M50FLW080A, M50FLW080B
28/64
4.7
Chip Erase command
The Chip Erase Command erases the entire memory array, setting all of the bits to ‘1’. All
previous data in the memory array are lost. This command, though, is only available under
the A/A Mux interface.
Two Bus Write operations are required to issue the command, and to start the
Program/Erase Controller. Once the command is issued, subsequent Bus Read operations
read the contents of the Status Register. (See the section on the Status Register for details
on the definitions of the Status Register bits.)
Erasing should not be attempted when V
PP
is not at V
PPH
, otherwise the result is uncertain.
During the Chip Erase operation, the memory will only accept the Read Status Register
command. All other commands are ignored.
See
Figure 25
, for a suggested flowchart on using the Chip Erase command. Typical Chip
Erase times are given in
Table 18
.
4.8
Block Erase command
The Block Erase command is used to erase a block, setting all of the bits to ‘1’. All previous
data in the block are lost.
Two Bus Write operations are required to issue the command. The second Bus Write cycle
latches the block address and starts the Program/Erase Controller. Once the command is
issued, subsequent Bus Read operations read the contents of the Status Register. (See the
section on the Status Register for details on the definitions of the Status Register bits.)
If the block, or if at least one sector of the block (for the blocks that are split into sectors), is
protected (FWH/LPC only) then the Block Erase operation will abort, the data in the block
will not be changed, and the Status Register will indicate the error.
During the Block Erase operation the memory will only accept the Read Status Register and
Program/Erase Suspend commands. All other commands are ignored.
See
Figure 26
, for a suggested flowchart on using the Block Erase command. Typical Block
Erase times are given in
Table 18
.
4.9
Sector Erase command
The Sector Erase command is used to erase a Uniform 4-KByte Sector, setting all of the bits
to ‘1’. All previous data in the sector are lost.
Two Bus Write operations are required to issue the command. The second Bus Write cycle
latches the Sector address and starts the Program/Erase Controller. Once the command is
issued, subsequent Bus Read operations read the contents of the Status Register. (See the
section on the Status Register for details on the definitions of the Status Register bits.)
If the Sector is protected (FWH/LPC only), the Sector Erase operation will abort, the data in
the Sector will not be changed, and the Status Register will indicate the error.
During the Sector Erase operation the memory will only accept the Read Status Register
and Program/Erase Suspend commands. All other commands are ignored.
See
Figure 26
, for a suggested flowchart on using the Sector Erase Command. Typical
Sector Erase times are given in
Table 18
.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M50FLW080BNB5P | 8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory |
| M50FLW080BNB5TP | 8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory |
| M50FLW080AK5P | 8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory |
| M50FLW080AK5TP | 8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory |
| M50FLW080AN5P | 8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M50FLW080BNB5 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory |
| M50FLW080BNB5G | 功能描述:IC FLASH 8MBIT 33MHZ 32TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| M50FLW080BNB5P | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory |
| M50FLW080BNB5T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory |
| M50FLW080BNB5TG | 功能描述:IC FLASH 8MBIT 33MHZ 32TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
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