參數(shù)資料
型號(hào)： M50FLW080BN5TP
廠商： 意法半導(dǎo)體
英文描述： 8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory
中文描述： 8兆位（13 × 64KB之座3 × 16 × 4KB的部門），3V電源固件集線器/低引腳數(shù)快閃記憶體
文件頁(yè)數(shù)： 16/64頁(yè)
文件大?。?/td> 341K
代理商： M50FLW080BN5TP
Signal descriptions
M50FLW080A, M50FLW080B
16/64
2.3
Supply signal descriptions
The Supply Signals are the same for both interfaces.
2.3.1
V
CC
supply voltage
The V
CC
Supply Voltage supplies the power for all operations (read, program, erase, etc.).
The Command Interface is disabled when the V
CC
Supply Voltage is less than the Lockout
Voltage, V
LKO
. This is to prevent Bus Write operations from accidentally damaging the data
during power up, power down and power surges. If the Program/Erase Controller is
programming or erasing during this time, the operation aborts, and the memory contents
that were being altered will be invalid. After V
CC
becomes valid, the Command Interface is
reset to Read mode.
A 0.1μF capacitor should be connected between the V
CC
Supply Voltage pins and the V
SS
Ground pin to decouple the current surges from the power supply. Both V
CC
Supply Voltage
pins must be connected to the power supply. The PCB track widths must be sufficient to
carry the currents required during program and erase operations.
2.3.2
V
PP
optional supply voltage
The V
PP
Optional Supply Voltage pin is used to select the Fast Program (see the Quadruple
Byte Program command description in A/A Mux interface and the Double/Quadruple Byte
Program command description in FWH mode) and Fast Erase options of the memory.
When V
PP
= V
CC
, program and erase operations take place as normal. When V
PP
= V
PPH
,
Fast Program and Erase operations are used. Any other voltage input to V
PP
will result in
undefined behavior, and should not be used.
V
PP
should not be set to V
PPH
for more than 80 hours during the life of the memory.
2.3.3
V
SS
ground
V
SS
is the reference for all the voltage measurements.
Table 5.
Memory identification input configuration (LPC mode)
Memory Number
ID3
ID2
A21
A20
1 (Boot memory)
V
IL
or float
V
IL
or float
1
1
2
V
IL
or float
V
IH
1
0
3
V
IH
V
IL
or float
0
1
4
V
IH
V
IH
0
0
相關(guān)PDF資料
PDF描述
M50FLW080BNB5P 8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory
M50FLW080BNB5TP 8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory
M50FLW080AK5P 8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory
M50FLW080AK5TP 8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory
M50FLW080AN5P 8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M50FLW080BNB5 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory
M50FLW080BNB5G 功能描述:IC FLASH 8MBIT 33MHZ 32TSOP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:移動(dòng) SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2
M50FLW080BNB5P 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory
M50FLW080BNB5T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory
M50FLW080BNB5TG 功能描述:IC FLASH 8MBIT 33MHZ 32TSOP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:移動(dòng) SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2
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