參數(shù)資料
型號(hào)： M470L6423CK0
廠(chǎng)商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 512MB DDR SDRAM MODULE (64Mx64 based on DDP 64Mx 8 DDR SDRAM) 200pin SODIMM 64bit Non-ECC/Parity
中文描述： 512MB的DDR SDRAM內(nèi)存模組（64Mx64基于鉑64Mx 8 DDR內(nèi)存）200pin的SODIMM 64 Non-ECC/Parity
文件頁(yè)數(shù)： 13/14頁(yè)
文件大小： 121K
代理商： M470L6423CK0
200pin DDR SDRAM SODIMM
M470L6423CK0
Rev. 0.0 Aug. 2001
Command Truth Table
(V=Valid, X=Don
′
t Care, H=Logic High, L=Logic Low)
COMMAND
CKEn-1
CKEn
CS
RAS
CAS
WE
BA
0,1
A
10
/AP
A
12
, A
11
A
9
~ A
0
Note
Register
Extended MRS
H
X
L
L
L
L
OP CODE
1, 2
Register
Mode Register Set
H
X
L
L
L
L
OP CODE
1, 2
Refresh
Auto Refresh
H
H
L
L
L
H
X
3
Self
Refresh
Entry
L
3
Exit
L
H
L
H
H
H
X
3
H
X
X
X
3
Bank Active & Row Addr.
H
X
L
L
H
H
V
Row Address
Read &
Column Address
Auto Precharge Disable
H
X
L
H
L
H
V
L
Column
Address
(A
0
~A
9
)
4
Auto Precharge Enable
H
4
Write &
Column Address
Auto Precharge Disable
H
X
L
H
L
L
V
L
Column
Address
(A
0
~A
9
)
4
Auto Precharge Enable
H
4, 6
Burst Stop
H
X
L
H
H
L
X
7
Precharge
Bank Selection
H
X
L
L
H
L
V
L
X
All Banks
X
H
5
Active Power Down
Entry
H
L
H
X
X
X
X
L
V
V
V
Exit
L
H
X
X
X
X
Precharge Power Down Mode
Entry
H
L
H
X
X
X
X
L
H
H
H
Exit
L
H
H
X
X
X
L
V
V
V
DM
H
X
X
8
No operation (NOP) : Not defined
H
X
H
X
X
X
X
9
L
H
H
H
9
Note : 1. OP Code : Operand Code. A
0
~ A
12
& BA
0
~ BA
1
: Program keys. (@EMRS/MRS)
2. EMRS/ MRS can be issued only at all banks precharge state.
A new command can be issued 2 clock cycles after EMRS or MRS.
3. Auto refresh functions are same as the CBR refresh of DRAM.
The automatical precharge without row precharge command is meant by "Auto".
Auto/self refresh can be issued only at all banks precharge state.
4. BA
0
~ BA
1
: Bank select addresses.
If both BA
0
and BA
1
are "Low" at read, write, row active and precharge, bank A is selected.
If both BA
0
is "High" and BA
1
is "Low" at read, write, row active and precharge, bank B is selected.
If both BA
0
is "Low" and BA
1
is "High" at read, write, row active and precharge, bank C is selected.
If both BA
0
and BA
1
are "High" at read, write, row active and precharge, bank D is selected.
5. If A
10
/AP is "High" at row precharge, BA
0
and BA
1
are ignored and all banks are selected.
6. During burst write with auto precharge, new read/write command can not be issued.
Another bank read/write command can be issued after the end of burst.
New row active of the associated bank can be issued at t
RP
after the end of burst.
7. Burst stop command is valid at every burst length.
8. DM sampled at the rising and falling edges of the DQS and Data-in are masked at the both edges (Write DM latency is 0).
9. This combination is not defined for any function, which means "No Operation(NOP)" in DDR SDRAM.
相關(guān)PDF資料
PDF描述
M470L6423EN 512MB Unbuffered SODIMM(based on sTSOP)
M470L6423EN0-A2 512MB Unbuffered SODIMM(based on sTSOP)
M470L6423EN0-B0 512MB Unbuffered SODIMM(based on sTSOP)
M470L6423EN0-CB3 512MB Unbuffered SODIMM(based on sTSOP)
M470L6423EN0-CLB3 512MB Unbuffered SODIMM(based on sTSOP)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M470L6423EN 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512MB Unbuffered SODIMM(based on sTSOP)
M470L6423EN0-A2 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512MB Unbuffered SODIMM(based on sTSOP)
M470L6423EN0-B0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512MB Unbuffered SODIMM(based on sTSOP)
M470L6423EN0-CB3 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512MB Unbuffered SODIMM(based on sTSOP)
M470L6423EN0-CLB3 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512MB Unbuffered SODIMM(based on sTSOP)
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