參數(shù)資料
型號(hào): M39832-T12WNE6T
廠商: 意法半導(dǎo)體
英文描述: TVS UNI-DIR 33V 600W DO-15
中文描述: 單芯片8兆1兆x8或512KB的x16閃存和256千位并行EEPROM存儲(chǔ)器
文件頁(yè)數(shù): 14/36頁(yè)
文件大小: 253K
代理商: M39832-T12WNE6T
READ
Read operations and instructions can be used to:
– read the contents of the Memory Array (Flash
and EEPROM)
– read the status bits and identifiers.
Read data (Flash and EEPROM)
Both Chip Enable EF (or EE) and Output Enable
(G) must be low in order to read the data from the
memory.
Read the Manufacturer Identifier
The manufacturer’s identifier can be read with two
methods: a Read operation or a Read instruction.
Read Operation.
The manufacturer’s identifier can
be read with a Read operation with specific logic
levels applied on A0, A1, A6 and the V
ID
level on
A9 (See Table 7).
Read Instruction.
The manufacturer’s identifier
can also be read with a single read operation
immediatly following the AS instruction (See Table
5A and Table 7).
Read the Flash Identifier
The Flash identifier can be read with two methods:
a Read operation or a Read instruction.
Read Operation.
The Flash identifier can be read
with a single Read operation with specific logic
levels applied on A0, A1, A6 and the V
ID
level on
A9 (See Table 7).
Read Instruction.
The Flash identifier can also be
read with a single read operation immediatly follow-
ing the AS instruction (See Table 5A and Table 7).
AI01699B
WRITE AAh in
Address 5555h
WRITE 55h in
Address 2AAAh
WRITE 80h in
Address 5555h
Unprotected State
after
tWC (Write Cycle time)
WRITE AAh in
Address 5555h
WRITE 55h in
Address 2AAAh
WRITE 20h in
Address 5555h
Page
Write
Instruction
Figure 5. EEPROM SDP disable Flowchart
READ DQ5 & DQ7
at VALID ADDRESS
START
READ DQ7
FAIL
PASS
AI01369
D=
DATA
YES
NO
YES
NO
DQ5
= 1
D=
DATA
YES
NO
Figure 6. EEPROM and Flash Data Polling
Flowchart
14/36
M39832
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