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參數(shù)資料
| 型號(hào)： | M37542F8VGP |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | 8-BIT, FLASH, 8 MHz, MICROCONTROLLER, PQFP32 |
| 封裝： | 7 X 7 MM, 0.80 MM PITCH, PLASTIC, LQFP-32 |
| 文件頁(yè)數(shù)： | 14/139頁(yè) |
| 文件大?。?/td> | 1448K |
| 代理商： | M37542F8VGP |
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7542 Group
Rev.3.02
Oct 31, 2006
Page 110 of 134
REJ03B0006-0302
A/D Converter Characteristics (Extended operating temperature version)
Table 33 A/D Converter characteristics (Extended operating temperature version)
(VCC = 2.7 to 5.5 V, VSS = 0 V, Ta = –40 to 85 °C, unless otherwise noted)
Resolution
Absolute accuracy
Conversion time
Ladder resistor
Reference power source input current
A/D port input current
Min.
Typ.
Max.
Symbol
Parameter
Limits
Unit
Test conditions
Ta = 25 °C
Mask ROM
VCC = VREF = 2.7 to 5.5 V
FLASH ROM
AD conversion clock = f(XIN)/2
AD conversion clock = f(XIN)
VREF = 5.0 V
VREF = 3.0 V
Bits
LSB
tc(XIN)
k
A
10
± 3
± 4
122
61
200
120
5.0
—
tCONV
RLADDER
IVREF
II(AD)
55
150
90
50
30
Note: AD conversion accuracy may be low under the following conditions;
(1) When the VREF voltage is set to be lower than the VCC voltage, an analog circuit in this microcomputer is affected by noise.
The accuracy is lower than the case the VREF voltage is the same as VCC voltage.
(2) When the VREF voltage is 3.0 V or less at the low temperature, the AD conversion accuracy may be very lower than at room temperature.
When system is used at low temperature, that VREF is 3.0 V or more is recommended.
Electrical Characteristics of 7542 Group Flash Memory (Extended operating temperature version)
Table 34 Electrical Characteristics of 7542 Group Flash Memory (Extended operating temperature version)
Symbol
Parameter
Program/Erase endurance (Note 1)
Byte program time
2Kbyte-block
Block erase time
8Kbyte-block
16Kbyte-block
Time delay from suspend request until erase suspend
Erase suspend request interval
Program, erase voltage
Read voltage
Program, erase temperature
Data hold time
td(SR-ES)
Note 1. Definition of program and erase
The program and erase endurance shows an erase endurance for every block.
If the program and erase endurance is “n” times (n = 100), “n” times erase can be performed for every block.
For example, if performing 1-byte write to the distinct addresses on Block A of 2Kbyte block 2048 times and then erasing that block,
program and erase endurance is counted as one time.
However, do not perform multiple programs to the same address for one time erase. (disable overwriting).
Limits
Unit
Min.
100
10
2.7
0
20
Typ.
50
0.2
0.4
0.7
Max.
400
9
8
5.5
60
times
s
ms
V
°C
year
Test
conditions
Ta = 55 °C
Fig. 106 Time delay from suspend request until erase suspend
td(SR-ES)
Erase-suspend request
(interrupt request)
Erase suspend flag
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