參數(shù)資料
型號(hào)： M36WT864TF
廠商： 意法半導(dǎo)體
英文描述： 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
中文描述： 64兆位4Mb的x16插槽，多銀行，突發(fā)閃存和8兆位的SRAM為512k x16，內(nèi)存產(chǎn)品多
文件頁(yè)數(shù)： 90/92頁(yè)
文件大?。?/td> 624K
代理商： M36WT864TF
M36WT864TF, M36WT864BF
90/92
Table 46. Command Interface States - Lock Table, Next State
Note: 1. CI = Command Interface, CR = Configuration Register, EFP = Enhanced Factory Program, Quad EFP = Quadruple Enhanced Fac-
tory Program, P/E. C. = Program/Erase Controller.
2. EFP and Quad EFP are allowed only when Status Register bit SR0 is set to ‘0’. EFP and Quad EFP are busy if Block Address is
first EFP Address. Any other commands are treated as data.
3. EFP and Quad EFP exit when Block Address is different from first Block Address and data is FFFFh.
4. If the P/E.C. is active, both cycles are ignored.
5. Illegal commands are those not defined in the command set.
Current CI State
Next CI State After Command Input
Block
Lock-Down
Confirm
Lock/CR
Setup
(4)
OTP Setup
(4)
Block Lock
Confirm
Set CR
Confirm
EFP Exit,
Quad EFP
Exit
(3)
Illegal
Command
(5)
P/E. C.
Operation
Completed
Ready
Lock/CR
Setup
OTP Setup
Ready
N/A
Lock/CR Setup
Ready (Lock error)
Ready
Ready (Lock error)
N/A
OTP
Setup
Busy
Setup
Busy
Suspend
Setup
Busy
OTP Busy
N/A
Ready
Program
Program Busy
N/A
Program Busy
Ready
Program Suspended
N/A
Erase
Ready (error)
N/A
Erase Busy
Ready
Suspend
Lock/CR
Setup in
Erase
Suspend
Erase Suspended
N/A
Program in
Erase
Suspend
Setup
Program in Erase Suspend Busy
N/A
Busy
Program in Erase Suspend Busy
Erase
Suspended
Suspend
Program in Erase Suspend Suspended
N/A
Lock/CR Setup
in Erase Suspend
Erase Suspend (Lock error)
Erase Suspend
Erase Suspend (Lock
error)
N/A
EFP
Setup
Ready (error)
N/A
Busy
EFP Busy
(2)
EFP Verify
EFP Busy
(2)
N/A
Verify
EFP Verify
(2)
Ready
EFP Verify
(2)
Ready
QuadEFP
Setup
Quad EFP Busy
(2)
N/A
Busy
Quad EFP Busy
(2)
Ready
Quad EFP
Busy
(2)
Ready
相關(guān)PDF資料
PDF描述
M36WT864B85ZA6T 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864T70ZA6T 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864TFZA 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864BFZA 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M36WT864TF70ZA6T 功能描述:組合存儲(chǔ)器 64M (4Mx16) 70ns RoHS:否 制造商:Microchip Technology 組織:512 K x 16 電源電壓-最大: 電源電壓-最小: 最大工作溫度:+ 85 C 最小工作溫度:- 20 C 封裝 / 箱體:LFBGA-48 封裝:Tray
M36WT864TFZA 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT8B10ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT8B70ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT8B85ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
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