參數(shù)資料
型號: M36WT864TF
廠商: 意法半導(dǎo)體
英文描述: 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
中文描述: 64兆位4Mb的x16插槽,多銀行,突發(fā)閃存和8兆位的SRAM為512k x16,內(nèi)存產(chǎn)品多
文件頁數(shù): 50/92頁
文件大?。?/td> 624K
代理商: M36WT864TF
M36WT864TF, M36WT864BF
50/92
Figure 15. Flash Clock input AC Waveform
Table 22. Flash Synchronous Read AC Characteristics
Note: 1. Sampled only, not 100% tested.
2. For other timings please refer to Table 21, Asynchronous Read AC Characteristics.
3. To be characterized.
Symbol
Alt
Parameter
M36WT864TF/BF
Unit
70
85
100
S
t
AVKH
t
AVCLKH
Address Valid to Clock High
Min
9
9
9
ns
t
ELKH
t
ELCLKH
Chip Enable Low to Clock High
Min
9
9
9
ns
t
ELTV
Chip Enable Low to Wait Valid
Max
14
(3)
18
18
ns
t
EHEL
Chip Enable Pulse Width
(subsequent synchronous reads)
Min
14
(3)
14
14
ns
t
EHTZ
Chip Enable High to Wait Hi-Z
Max
20
(3)
20
20
ns
t
KHAX
t
CLKHAX
Clock High to Address Transition
Min
10
10
10
ns
t
KHQV
t
KHTV
t
CLKHQV
Clock High to Output Valid
Clock High to WAIT Valid
Max
14
(3)
18
18
ns
t
KHQX
t
KHTX
t
CLKHQX
Clock High to Output Transition
Clock High to WAIT Transition
Min
4
4
4
ns
t
LLKH
t
ADVLCLKH
Latch Enable Low to Clock High
Min
9
9
9
ns
C
t
KHKH
t
CLK
Clock Period (f=40MHz)
Min
25
25
ns
Clock Period (f=54MHz)
Min
18.5
ns
t
KHKL
t
KLKH
Clock High to Clock Low
Clock Low to Clock High
Min
4.5
5
5
ns
t
f
t
r
Clock Fall or Rise Time
Max
3
3
3
ns
AI06981
tKHKH
tf
tr
tKHKL
tKLKH
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